FQB8N60CTM-VB Product details
Product introduction:
FQB8N60CTM-VB is a single N-channel power MOSFET in TO263 package with high voltage withstand capability, suitable for a variety of high voltage applications. Its main features include 650V drain-source voltage (VDS), ±30V gate-source voltage (VGS), and 10A drain current (ID). The device has a turn-on voltage of 3.5V and uses planar process technology. It has an on-resistance (RDS(ON)) of 1100mΩ at VGS=10V and is suitable for power conversion and switching applications that require high voltage withstand and reliability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 10A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
1. **Package type**: TO263
FQB8N60CTM-VB adopts TO263 package, which is suitable for surface mount applications and provides good thermal management and high power handling capabilities.
2. **Polarity**: Single N-channel
This device is a single N-channel MOSFET suitable for low-side switch applications.
3. **Drain-source voltage (VDS)**: 650V
Withstands up to 650V of voltage, suitable for high voltage applications.
4. **Gate-source voltage (VGS)**: ±30V
Can withstand ±30V gate-source voltage to ensure the stability of the device in different applications.
5. **Throw-on voltage (Vth)**: 3.5V
The typical turn-on voltage is 3.5V, ensuring that the MOSFET is stably turned on at a lower gate voltage.
6. **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
At VGS=10V, the on-resistance is 1100mΩ, suitable for applications requiring higher on-resistance.
7. **Drain current (ID)**: 10A
The maximum drain current is 10A, supporting medium power handling capabilities.
8. **Technology**: Planar process
Planar process technology is used to provide stable electrical performance and reliability.
Domain and module applications:
1. **Power conversion module**:
FQB8N60CTM-VB can be used as a high-voltage or low-voltage side switch device in the power conversion module, suitable for AC-DC and DC-DC converters to ensure efficient conversion of electrical energy.
2. **Lighting equipment**:
In high-voltage LED drivers, FQB8N60CTM-VB can be used to regulate current and control the brightness of LED lights, while having high reliability and long service life.
3. **Motor driver**:
This MOSFET is suitable for use in high-voltage motor drive applications, such as motor drivers in fans, pumps and home appliances, providing stable current control and power conversion.
4. **Uninterruptible power supply (UPS)**:
FQB8N60CTM-VB can be used as the main power switch in the UPS system to manage the switching between battery power and grid power to ensure continuous operation of the equipment during power outages.
5. **Industrial Control Systems**:
In industrial automation and control systems, the device can be used to control high voltage loads such as solenoid valves, heaters, and large motors to ensure safe and stable operation of the system.
These application examples demonstrate the wide applicability of the FQB8N60CTM-VB in high voltage power management and switch control for a variety of industrial and consumer electronic devices.
Technical support:
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