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FQB7P20-VB Product details
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1. Product Introduction
FQB7P20-VB is a single P-channel MOSFET in a TO-263 package with excellent electrical performance and durability. The device can operate at voltages up to -200V and is suitable for a variety of high-voltage and load switching applications. It uses advanced trench technology to ensure low on-resistance and high efficiency, especially suitable for applications requiring higher power density and current handling capabilities.
FQB7P20-VB is a single P-channel MOSFET in a TO-263 package with excellent electrical performance and durability. The device can operate at voltages up to -200V and is suitable for a variety of high-voltage and load switching applications. It uses advanced trench technology to ensure low on-resistance and high efficiency, especially suitable for applications requiring higher power density and current handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | 500mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
2. Detailed parameter description
- **Package type**: TO-263
TO-263 is a surface mount package type with excellent thermal performance and is suitable for high power applications.
- **Polarity**: Single P-channel
This MOSFET adopts a single P-channel design, making it suitable for handling negative voltages and load switching applications.
- **Maximum drain-source voltage (VDS)**: -200V
Can withstand drain-source voltages up to -200V, suitable for high voltage applications.
- **Maximum gate-source voltage (VGS)**: ±20V
Able to withstand gate-source voltages of ±20V, providing greater operational flexibility.
- **Threshold voltage (Vth)**: -3.5V
The turn-on voltage of the MOSFET is -3.5V, suitable for low gate drive voltage applications.
- **On-resistance (RDS(ON))**:
- 600mΩ @ VGS = 4.5V
At 4.5V gate drive voltage, the on-resistance is 600mΩ.
- 500mΩ @ VGS = 10V
At 10V gate drive voltage, the on-resistance drops to 500mΩ.
- **Maximum drain current (ID)**: -11A
Capable of handling currents up to -11A, suitable for medium current applications.
- **Technology**: Trench
Using trench technology, it provides lower on-resistance and higher current density, which helps improve overall efficiency.
- **Package type**: TO-263
TO-263 is a surface mount package type with excellent thermal performance and is suitable for high power applications.
- **Polarity**: Single P-channel
This MOSFET adopts a single P-channel design, making it suitable for handling negative voltages and load switching applications.
- **Maximum drain-source voltage (VDS)**: -200V
Can withstand drain-source voltages up to -200V, suitable for high voltage applications.
- **Maximum gate-source voltage (VGS)**: ±20V
Able to withstand gate-source voltages of ±20V, providing greater operational flexibility.
- **Threshold voltage (Vth)**: -3.5V
The turn-on voltage of the MOSFET is -3.5V, suitable for low gate drive voltage applications.
- **On-resistance (RDS(ON))**:
- 600mΩ @ VGS = 4.5V
At 4.5V gate drive voltage, the on-resistance is 600mΩ.
- 500mΩ @ VGS = 10V
At 10V gate drive voltage, the on-resistance drops to 500mΩ.
- **Maximum drain current (ID)**: -11A
Capable of handling currents up to -11A, suitable for medium current applications.
- **Technology**: Trench
Using trench technology, it provides lower on-resistance and higher current density, which helps improve overall efficiency.
Domain and module applications：
3. Application fields and module description
1. **Power management**: FQB7P20-VB is suitable for use in power management modules, especially in power switching applications that require high efficiency and high reliability. Its high withstand voltage characteristics and low on-resistance make it an ideal choice for DC-DC converters and AC-DC power supplies.
2. **Motor drive**: Due to its ability to handle high voltage and medium current, this MOSFET performs well in motor drive applications and is suitable for small motor control circuits.
3. **Inverters and converters**: FQB7P20-VB can be used in solar inverters, UPS (uninterruptible power supply) and power converters. Its high voltage capability and good switching characteristics help improve system efficiency.
4. **Load switch**: In applications that require switching high voltage loads, such as industrial automation and smart home devices, this MOSFET can provide reliable load control.
5. **Battery protection circuit**: FQB7P20-VB can be used in lithium battery protection circuits to protect batteries from damage caused by overcharge or overdischarge and extend battery life.
These application scenarios demonstrate the diversity and high performance of FQB7P20-VB in different fields.
1. **Power management**: FQB7P20-VB is suitable for use in power management modules, especially in power switching applications that require high efficiency and high reliability. Its high withstand voltage characteristics and low on-resistance make it an ideal choice for DC-DC converters and AC-DC power supplies.
2. **Motor drive**: Due to its ability to handle high voltage and medium current, this MOSFET performs well in motor drive applications and is suitable for small motor control circuits.
3. **Inverters and converters**: FQB7P20-VB can be used in solar inverters, UPS (uninterruptible power supply) and power converters. Its high voltage capability and good switching characteristics help improve system efficiency.
4. **Load switch**: In applications that require switching high voltage loads, such as industrial automation and smart home devices, this MOSFET can provide reliable load control.
5. **Battery protection circuit**: FQB7P20-VB can be used in lithium battery protection circuits to protect batteries from damage caused by overcharge or overdischarge and extend battery life.
These application scenarios demonstrate the diversity and high performance of FQB7P20-VB in different fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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