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FQB7P20TM_F085-VB Product details
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Product Introduction
FQB7P20TM_F085-VB is a high-performance P-channel MOSFET in TO263 package, designed for high voltage and medium current applications. This MOSFET uses Trench technology, has a drain-source breakdown voltage of -200V and a moderate on-resistance, making it ideal for electronic devices and power modules that require high voltage resistance. It is designed to provide excellent switching performance and power efficiency, and performs well in switching and protection applications of high voltage loads.
FQB7P20TM_F085-VB is a high-performance P-channel MOSFET in TO263 package, designed for high voltage and medium current applications. This MOSFET uses Trench technology, has a drain-source breakdown voltage of -200V and a moderate on-resistance, making it ideal for electronic devices and power modules that require high voltage resistance. It is designed to provide excellent switching performance and power efficiency, and performs well in switching and protection applications of high voltage loads.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | 500mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single P-channel
- **Drain-source breakdown voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3.5V
- **On-resistance (RDS(ON))**:
- 600mΩ @ VGS=4.5V
- 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: -11A
- **Technology type**: Trench
- **Package type**: TO263
- **Channel configuration**: Single P-channel
- **Drain-source breakdown voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3.5V
- **On-resistance (RDS(ON))**:
- 600mΩ @ VGS=4.5V
- 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: -11A
- **Technology type**: Trench
Domain and module applications：
Applications and module examples
1. **High voltage switch**: FQB7P20TM_F085-VB is suitable for high voltage switch applications. Its -200V drain-source breakdown voltage enables it to handle high voltage loads, such as being used as a switch in high voltage power supplies and industrial control systems.
2. **Power management**: In power management modules, this MOSFET can be used for power switching and load control. Its high drain-source breakdown voltage and moderate on-resistance enable it to provide reliable switching functions in power modules.
3. **Power protection**: In applications where circuits need to be protected from overvoltage and overcurrent, FQB7P20TM_F085-VB can be used as a protection switch. Its high voltage tolerance and moderate on-resistance can effectively manage and protect the power system.
4. **Battery management**: In battery management systems, this MOSFET can be used for battery protection and switch control, especially in high voltage battery pack applications. Its high voltage withstand capability and low on-resistance help improve the overall efficiency and safety of the system.
FQB7P20TM_F085-VB provides excellent solutions in the fields of high voltage switching, power management, power protection and battery management with its high voltage withstand, reliable switching performance and moderate on-resistance.
1. **High voltage switch**: FQB7P20TM_F085-VB is suitable for high voltage switch applications. Its -200V drain-source breakdown voltage enables it to handle high voltage loads, such as being used as a switch in high voltage power supplies and industrial control systems.
2. **Power management**: In power management modules, this MOSFET can be used for power switching and load control. Its high drain-source breakdown voltage and moderate on-resistance enable it to provide reliable switching functions in power modules.
3. **Power protection**: In applications where circuits need to be protected from overvoltage and overcurrent, FQB7P20TM_F085-VB can be used as a protection switch. Its high voltage tolerance and moderate on-resistance can effectively manage and protect the power system.
4. **Battery management**: In battery management systems, this MOSFET can be used for battery protection and switch control, especially in high voltage battery pack applications. Its high voltage withstand capability and low on-resistance help improve the overall efficiency and safety of the system.
FQB7P20TM_F085-VB provides excellent solutions in the fields of high voltage switching, power management, power protection and battery management with its high voltage withstand, reliable switching performance and moderate on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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