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FQB7N20L-VB Product details
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Product Introduction
FQB7N20L-VB is a single N-channel power MOSFET with a TO263 package. The MOSFET supports a drain-source voltage (VDS) of up to 200V, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. At a gate-source voltage of 10V, the on-resistance (RDS(ON)) of FQB7N20L-VB is 300mΩ, and it can carry a maximum drain current (ID) of 10A. It uses Trench technology, providing excellent switching performance and high efficiency, and is suitable for various power conversion and management applications.
FQB7N20L-VB is a single N-channel power MOSFET with a TO263 package. The MOSFET supports a drain-source voltage (VDS) of up to 200V, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. At a gate-source voltage of 10V, the on-resistance (RDS(ON)) of FQB7N20L-VB is 300mΩ, and it can carry a maximum drain current (ID) of 10A. It uses Trench technology, providing excellent switching performance and high efficiency, and is suitable for various power conversion and management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | 300mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 300mΩ @ VGS=10V
- **Maximum drain current (ID)**: 10A
- **Technology type**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 300mΩ @ VGS=10V
- **Maximum drain current (ID)**: 10A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
The high voltage capability and excellent switching performance of the FQB7N20L-VB make it suitable for a variety of applications:
1. **Power management**: The 200V drain-source voltage of the FQB7N20L-VB makes it ideal for use in high-voltage power management systems. In switching power supplies and power conversion modules, it can effectively control current and manage power conversion under high voltage conditions to provide stable output.
2. **Motor control**: In motor drive systems, the FQB7N20L-VB is capable of handling high voltages and medium currents, making it suitable for driving and controlling medium-power motors. The high voltage capability and low on-resistance of this MOSFET enable it to effectively control the operation of the motor.
3. **DC-DC converter**: In DC-DC converter applications, the high voltage handling capability and low on-resistance of the FQB7N20L-VB ensure efficient power conversion. This makes it suitable for battery-powered systems, power adapters, and other power conversion devices.
4. **Power Switch**: Used in various power switching applications, such as power switches and load switches. FQB7N20L-VB is able to stably switch loads under high voltage conditions, suitable for applications such as switching power supplies and motor control.
5. **Power Protection**: In power protection circuits, such as overvoltage protection and overcurrent protection devices, FQB7N20L-VB provides the necessary high voltage handling capability to protect other circuit components from power spikes and overloads.
FQB7N20L-VB's high voltage handling capability and excellent switching performance make it an important component in high voltage applications, such as power management, motor control and power switching.
The high voltage capability and excellent switching performance of the FQB7N20L-VB make it suitable for a variety of applications:
1. **Power management**: The 200V drain-source voltage of the FQB7N20L-VB makes it ideal for use in high-voltage power management systems. In switching power supplies and power conversion modules, it can effectively control current and manage power conversion under high voltage conditions to provide stable output.
2. **Motor control**: In motor drive systems, the FQB7N20L-VB is capable of handling high voltages and medium currents, making it suitable for driving and controlling medium-power motors. The high voltage capability and low on-resistance of this MOSFET enable it to effectively control the operation of the motor.
3. **DC-DC converter**: In DC-DC converter applications, the high voltage handling capability and low on-resistance of the FQB7N20L-VB ensure efficient power conversion. This makes it suitable for battery-powered systems, power adapters, and other power conversion devices.
4. **Power Switch**: Used in various power switching applications, such as power switches and load switches. FQB7N20L-VB is able to stably switch loads under high voltage conditions, suitable for applications such as switching power supplies and motor control.
5. **Power Protection**: In power protection circuits, such as overvoltage protection and overcurrent protection devices, FQB7N20L-VB provides the necessary high voltage handling capability to protect other circuit components from power spikes and overloads.
FQB7N20L-VB's high voltage handling capability and excellent switching performance make it an important component in high voltage applications, such as power management, motor control and power switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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