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FQB70N06-VB Product details
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Product Introduction
The FQB70N06-VB is a low voltage single N-channel MOSFET in a TO263 package designed for high current, low voltage applications. The device features a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. With its low on-resistance (RDS(ON)) of 12mΩ (@VGS=4.5V) and 11mΩ (@VGS=10V), it is capable of handling drain currents (ID) of up to 75A. This makes the FQB70N06-VB ideal for use in high efficiency and high power density applications.
The FQB70N06-VB is a low voltage single N-channel MOSFET in a TO263 package designed for high current, low voltage applications. The device features a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. With its low on-resistance (RDS(ON)) of 12mΩ (@VGS=4.5V) and 11mΩ (@VGS=10V), it is capable of handling drain currents (ID) of up to 75A. This makes the FQB70N06-VB ideal for use in high efficiency and high power density applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**: 12mΩ@VGS=4.5V，11mΩ@VGS=10V
- **Drain current (ID)**: 75A
- **Technology**: Trench
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**: 12mΩ@VGS=4.5V，11mΩ@VGS=10V
- **Drain current (ID)**: 75A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
FQB70N06-VB MOSFET performs well in a variety of applications due to its low on-resistance and high current handling capabilities. In the motor control module of power tools, the device can effectively handle large currents to ensure efficient operation of the motor. In automotive electronic systems, it can be used in power management modules or current control applications to optimize the performance of the on-board electrical system. In addition, FQB70N06-VB is also suitable for power conversion devices such as DC-DC converters and buck regulators. In these applications, the low on-resistance of MOSFET helps to improve conversion efficiency and reduce heat loss. Its wide range of applications also includes industrial automation equipment, battery management systems, and other electronic devices that require high current and low voltage processing.
FQB70N06-VB MOSFET performs well in a variety of applications due to its low on-resistance and high current handling capabilities. In the motor control module of power tools, the device can effectively handle large currents to ensure efficient operation of the motor. In automotive electronic systems, it can be used in power management modules or current control applications to optimize the performance of the on-board electrical system. In addition, FQB70N06-VB is also suitable for power conversion devices such as DC-DC converters and buck regulators. In these applications, the low on-resistance of MOSFET helps to improve conversion efficiency and reduce heat loss. Its wide range of applications also includes industrial automation equipment, battery management systems, and other electronic devices that require high current and low voltage processing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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