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FQB70N03-VB Product details
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1. FQB70N03-VB Product Introduction
FQB70N03-VB is a high-performance N-channel MOSFET packaged in TO263, designed for low-voltage and high-current switching applications. It has a drain-source voltage (VDS) of 30V and is suitable for low-voltage power supplies and load switches. The on-resistance of this MOSFET is very low, with 2.4mΩ@VGS=10V and 2.7mΩ@VGS=4.5V, providing excellent conductivity and effectively reducing power losses. The drain current (ID) is as high as 98A, enabling it to handle larger current loads. FQB70N03-VB uses Trench technology to optimize its switching efficiency and power density, and is widely used in electronic systems requiring high efficiency and high current.
FQB70N03-VB is a high-performance N-channel MOSFET packaged in TO263, designed for low-voltage and high-current switching applications. It has a drain-source voltage (VDS) of 30V and is suitable for low-voltage power supplies and load switches. The on-resistance of this MOSFET is very low, with 2.4mΩ@VGS=10V and 2.7mΩ@VGS=4.5V, providing excellent conductivity and effectively reducing power losses. The drain current (ID) is as high as 98A, enabling it to handle larger current loads. FQB70N03-VB uses Trench technology to optimize its switching efficiency and power density, and is widely used in electronic systems requiring high efficiency and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. FQB70N03-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Drain current (ID)**: 98A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Drain current (ID)**: 98A
- **Technology**: Trench technology
Domain and module applications：
III. Application fields and module examples of FQB70N03-VB
**1. Efficient power management**
FQB70N03-VB is suitable for efficient power management systems such as switching power supplies and DC-DC converters. Its low on-resistance enables it to reduce power loss during power conversion and improve the overall efficiency of the system. It is particularly suitable for use in power modules with high-frequency switching and high current.
**2. Motor drive system**
In the motor drive system, FQB70N03-VB can be used as a switching element in the motor control circuit. Its high drain current capability (98A) can support the starting and running of the motor, and is suitable for various power tools and industrial automation equipment, providing reliable high-current switching performance.
**3. LED drive circuit**
This MOSFET performs well in the LED drive circuit and can efficiently drive LED lamps. Its low on-resistance and high current capability enable it to effectively manage LED loads, provide stable brightness control, and reduce energy loss, making it suitable for high-power LED lighting systems.
**4. Power distribution system**
FQB70N03-VB is suitable for switch modules in power distribution systems, such as power distribution units (PDUs) and power management modules. Its high current carrying capacity and low on-resistance ensure efficient distribution and reliable switching of power, which can meet the requirements of power distribution systems for high efficiency and stability.
**1. Efficient power management**
FQB70N03-VB is suitable for efficient power management systems such as switching power supplies and DC-DC converters. Its low on-resistance enables it to reduce power loss during power conversion and improve the overall efficiency of the system. It is particularly suitable for use in power modules with high-frequency switching and high current.
**2. Motor drive system**
In the motor drive system, FQB70N03-VB can be used as a switching element in the motor control circuit. Its high drain current capability (98A) can support the starting and running of the motor, and is suitable for various power tools and industrial automation equipment, providing reliable high-current switching performance.
**3. LED drive circuit**
This MOSFET performs well in the LED drive circuit and can efficiently drive LED lamps. Its low on-resistance and high current capability enable it to effectively manage LED loads, provide stable brightness control, and reduce energy loss, making it suitable for high-power LED lighting systems.
**4. Power distribution system**
FQB70N03-VB is suitable for switch modules in power distribution systems, such as power distribution units (PDUs) and power management modules. Its high current carrying capacity and low on-resistance ensure efficient distribution and reliable switching of power, which can meet the requirements of power distribution systems for high efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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