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FQB6N90TM-VB Product details
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FQB6N90TM-VB MOSFET Product Introduction
FQB6N90TM-VB is a high-voltage N-channel MOSFET in TO263 package, specially designed for applications requiring high voltage and high power. It can withstand drain-source voltage (VDS) up to 900V, supports gate-source voltage (VGS) of ±30V, and has high voltage tolerance. Its threshold voltage is 3.5V, the on-resistance is 950mΩ at a gate drive voltage of 10V, and the maximum drain current is 7A. FQB6N90TM-VB uses SJ_Multi-EPI technology, which improves switching speed and current handling capability, enabling it to perform well in high-voltage applications.
FQB6N90TM-VB is a high-voltage N-channel MOSFET in TO263 package, specially designed for applications requiring high voltage and high power. It can withstand drain-source voltage (VDS) up to 900V, supports gate-source voltage (VGS) of ±30V, and has high voltage tolerance. Its threshold voltage is 3.5V, the on-resistance is 950mΩ at a gate drive voltage of 10V, and the maximum drain current is 7A. FQB6N90TM-VB uses SJ_Multi-EPI technology, which improves switching speed and current handling capability, enabling it to perform well in high-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
FQB6N90TM-VB MOSFET Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
The high withstand voltage and stable performance of FQB6N90TM-VB make it suitable for multiple high voltage and high power fields:
- **Power converter**: In high voltage DC-DC converters and AC-DC converters, FQB6N90TM-VB can be used as a switching element. Its high drain-source voltage withstand capability and high switching efficiency help improve the performance and stability of the converter.
- **Power protection circuit**: Due to its high voltage withstand capability, this MOSFET can be used in power protection circuits to prevent overvoltage and overcurrent conditions. Its high voltage withstand capability and high on-resistance help ensure the reliability and safety of the circuit.
- **Motor drive**: In high voltage motor drive applications, such as industrial motor control and high power motor drives, FQB6N90TM-VB can effectively control the switching of the motor and withstand high voltage and current loads.
- **High-voltage switch**: In high-voltage switching applications, FQB6N90TM-VB can be used as a switching element to control high-voltage loads. Its high voltage withstand capability and stable switching performance ensure reliable switching operation of high-voltage loads.
- **High-voltage power module**: In high-voltage power modules, such as high-voltage power supplies and power factor correction modules, the high voltage withstand capability and high durability of FQB6N90TM-VB make it an ideal choice.
The high voltage withstand performance and stability of FQB6N90TM-VB make it excellent in high-voltage and high-power applications, providing reliable switching control and efficient power management solutions.
The high withstand voltage and stable performance of FQB6N90TM-VB make it suitable for multiple high voltage and high power fields:
- **Power converter**: In high voltage DC-DC converters and AC-DC converters, FQB6N90TM-VB can be used as a switching element. Its high drain-source voltage withstand capability and high switching efficiency help improve the performance and stability of the converter.
- **Power protection circuit**: Due to its high voltage withstand capability, this MOSFET can be used in power protection circuits to prevent overvoltage and overcurrent conditions. Its high voltage withstand capability and high on-resistance help ensure the reliability and safety of the circuit.
- **Motor drive**: In high voltage motor drive applications, such as industrial motor control and high power motor drives, FQB6N90TM-VB can effectively control the switching of the motor and withstand high voltage and current loads.
- **High-voltage switch**: In high-voltage switching applications, FQB6N90TM-VB can be used as a switching element to control high-voltage loads. Its high voltage withstand capability and stable switching performance ensure reliable switching operation of high-voltage loads.
- **High-voltage power module**: In high-voltage power modules, such as high-voltage power supplies and power factor correction modules, the high voltage withstand capability and high durability of FQB6N90TM-VB make it an ideal choice.
The high voltage withstand performance and stability of FQB6N90TM-VB make it excellent in high-voltage and high-power applications, providing reliable switching control and efficient power management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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