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FQB6N80-VB Product details
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1. FQB6N80-VB MOSFET Product Introduction
FQB6N80-VB is a high voltage single N-channel MOSFET in TO263 package. This MOSFET is designed for high voltage applications and can withstand drain-source voltage (VDS) up to 800V. Its gate-source voltage (VGS) range is ±30V, providing a wide control range. The threshold voltage (Vth) of FQB6N80-VB is 3.5V, allowing it to effectively conduct at moderate gate voltages. The on-resistance (RDS(ON)) is 850mΩ (at VGS of 10V), supporting a drain current of up to 7A. Using SJ_Multi-EPI technology, this MOSFET has excellent high voltage characteristics and reliability, and is suitable for applications requiring high voltage and medium current.
FQB6N80-VB is a high voltage single N-channel MOSFET in TO263 package. This MOSFET is designed for high voltage applications and can withstand drain-source voltage (VDS) up to 800V. Its gate-source voltage (VGS) range is ±30V, providing a wide control range. The threshold voltage (Vth) of FQB6N80-VB is 3.5V, allowing it to effectively conduct at moderate gate voltages. The on-resistance (RDS(ON)) is 850mΩ (at VGS of 10V), supporting a drain current of up to 7A. Using SJ_Multi-EPI technology, this MOSFET has excellent high voltage characteristics and reliability, and is suitable for applications requiring high voltage and medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | 850mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description of FQB6N80-VB MOSFET
1. **Package**: TO263
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 800V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 850mΩ @ VGS=10V
7. **Drain current (ID)**: 7A
8. **Technology**: SJ_Multi-EPI
9. **Maximum junction temperature (Tj)**: Up to 150°C
10. **Input capacitance (Ciss)**: High, suitable for medium-frequency switching applications
11. **Switching speed**: Medium, suitable for medium frequency switching
12. **Drain-source diode reverse recovery time (trr)**: Longer, suitable for lower frequency operation
1. **Package**: TO263
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 800V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 850mΩ @ VGS=10V
7. **Drain current (ID)**: 7A
8. **Technology**: SJ_Multi-EPI
9. **Maximum junction temperature (Tj)**: Up to 150°C
10. **Input capacitance (Ciss)**: High, suitable for medium-frequency switching applications
11. **Switching speed**: Medium, suitable for medium frequency switching
12. **Drain-source diode reverse recovery time (trr)**: Longer, suitable for lower frequency operation
Domain and module applications：
3. Application fields and module examples of FQB6N80-VB MOSFET
1. **High voltage switching power supply**:
- FQB6N80-VB performs well in high voltage switching power supply. Its 800V drain-source voltage capability makes it suitable for switching and controlling high voltage power supply. It can handle power conversion in high voltage range and ensure efficient and stable power output.
2. **Motor drive**:
- In motor drive applications, despite its low drain current, its high voltage tolerance makes it suitable for switching elements in high voltage motor control systems. It can handle motor drive tasks in high voltage environments.
3. **High voltage power conversion**:
- FQB6N80-VB can be used in high voltage power conversion modules. Its high voltage tolerance and medium on-resistance make it suitable for power conversion tasks under high voltage. It can support high voltage power management requirements.
4. **Inverter and high voltage load switch**:
- In inverter and high voltage load switch applications, FQB6N80-VB can stably control high voltage loads. Its high drain-source voltage and high on-resistance are suitable for switching and protecting high voltage loads.
FQB6N80-VB MOSFET is widely used in high voltage switching power supplies, motor drives and power conversion due to its high voltage capability and reliability, providing stable and reliable switching and control solutions.
1. **High voltage switching power supply**:
- FQB6N80-VB performs well in high voltage switching power supply. Its 800V drain-source voltage capability makes it suitable for switching and controlling high voltage power supply. It can handle power conversion in high voltage range and ensure efficient and stable power output.
2. **Motor drive**:
- In motor drive applications, despite its low drain current, its high voltage tolerance makes it suitable for switching elements in high voltage motor control systems. It can handle motor drive tasks in high voltage environments.
3. **High voltage power conversion**:
- FQB6N80-VB can be used in high voltage power conversion modules. Its high voltage tolerance and medium on-resistance make it suitable for power conversion tasks under high voltage. It can support high voltage power management requirements.
4. **Inverter and high voltage load switch**:
- In inverter and high voltage load switch applications, FQB6N80-VB can stably control high voltage loads. Its high drain-source voltage and high on-resistance are suitable for switching and protecting high voltage loads.
FQB6N80-VB MOSFET is widely used in high voltage switching power supplies, motor drives and power conversion due to its high voltage capability and reliability, providing stable and reliable switching and control solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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