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FQB6N15-VB Product details
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1. FQB6N15-VB Product Introduction
FQB6N15-VB is a high-performance single-channel N-type MOSFET in TO263 package. This MOSFET has a drain-source voltage (VDS) of 200V and a maximum drain current (ID) of 40A. Its gate threshold voltage (Vth) is 3V, ensuring stable conduction under appropriate gate-source voltage. FQB6N15-VB is manufactured using Trench technology, providing a relatively low on-resistance (RDS(ON)), which is 48mΩ at a gate-source voltage (VGS) of 10V. This high current carrying capacity and low on-resistance make it suitable for a variety of applications that require high efficiency and high voltage tolerance.
FQB6N15-VB is a high-performance single-channel N-type MOSFET in TO263 package. This MOSFET has a drain-source voltage (VDS) of 200V and a maximum drain current (ID) of 40A. Its gate threshold voltage (Vth) is 3V, ensuring stable conduction under appropriate gate-source voltage. FQB6N15-VB is manufactured using Trench technology, providing a relatively low on-resistance (RDS(ON)), which is 48mΩ at a gate-source voltage (VGS) of 10V. This high current carrying capacity and low on-resistance make it suitable for a variety of applications that require high efficiency and high voltage tolerance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. FQB6N15-VB Detailed parameter description
1. **Package type**: TO263
2. **Polarity configuration**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 200V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 48mΩ @ VGS = 10V
7. **Drain current (ID)**: 40A
8. **Technology type**: Trench
1. **Package type**: TO263
2. **Polarity configuration**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 200V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 48mΩ @ VGS = 10V
7. **Drain current (ID)**: 40A
8. **Technology type**: Trench
Domain and module applications：
3. Examples of applicable fields and modules of FQB6N15-VB
The high voltage and high current characteristics of FQB6N15-VB MOSFET make it widely used in many fields and modules:
1. **Power management system**: In the power management system, FQB6N15-VB can be used for switching control of high voltage power supply. Its drain-source voltage of up to 200V makes it suitable for handling high voltage input, while the drain current capability of 40A ensures efficient switching control. It is suitable for power converters, voltage regulators and power adapters.
2. **DC-DC converter**: In the DC-DC converter, FQB6N15-VB can be used as a switching element on the high voltage input side. Its low on-resistance can improve conversion efficiency and reduce energy loss, and is suitable for use in high voltage DC-DC converters, inverters and other applications.
3. **Motor drive control**: FQB6N15-VB can be used as a switching element in the motor drive control system to control the operation of high-voltage motors. Its high current carrying capacity and low on-resistance ensure the high efficiency and reliability of motor drive, and is suitable for various industrial motor drive systems.
4. **High voltage load switch**: In applications requiring high voltage load switching, FQB6N15-VB provides stable switching performance and high current handling capability. It can be used for battery management, load protection and high voltage switching applications to ensure the safety and efficiency of the system.
5. **Power switching circuit**: In the power switching circuit, FQB6N15-VB can be used to control the switching state of high voltage power loads. Its high voltage and high current handling capabilities make it suitable for high power switching applications, such as power amplifiers and high power electronic devices.
The excellent electrical performance of FQB6N15-VB MOSFET enables it to perform well in various applications requiring high voltage and high current control.
The high voltage and high current characteristics of FQB6N15-VB MOSFET make it widely used in many fields and modules:
1. **Power management system**: In the power management system, FQB6N15-VB can be used for switching control of high voltage power supply. Its drain-source voltage of up to 200V makes it suitable for handling high voltage input, while the drain current capability of 40A ensures efficient switching control. It is suitable for power converters, voltage regulators and power adapters.
2. **DC-DC converter**: In the DC-DC converter, FQB6N15-VB can be used as a switching element on the high voltage input side. Its low on-resistance can improve conversion efficiency and reduce energy loss, and is suitable for use in high voltage DC-DC converters, inverters and other applications.
3. **Motor drive control**: FQB6N15-VB can be used as a switching element in the motor drive control system to control the operation of high-voltage motors. Its high current carrying capacity and low on-resistance ensure the high efficiency and reliability of motor drive, and is suitable for various industrial motor drive systems.
4. **High voltage load switch**: In applications requiring high voltage load switching, FQB6N15-VB provides stable switching performance and high current handling capability. It can be used for battery management, load protection and high voltage switching applications to ensure the safety and efficiency of the system.
5. **Power switching circuit**: In the power switching circuit, FQB6N15-VB can be used to control the switching state of high voltage power loads. Its high voltage and high current handling capabilities make it suitable for high power switching applications, such as power amplifiers and high power electronic devices.
The excellent electrical performance of FQB6N15-VB MOSFET enables it to perform well in various applications requiring high voltage and high current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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