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FQB65N06-VB Product details
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1. FQB65N06-VB Product Introduction
**FQB65N06-VB** is a high-performance N-channel MOSFET in TO263 package, designed for high current and medium voltage applications. The MOSFET has a maximum drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 1.7V. Its on-resistance (RDS(ON)) is 12mΩ at a gate-source voltage of 4.5V and 11mΩ at a gate-source voltage of 10V, and the drain current (ID) can reach 75A. FQB65N06-VB uses Trench technology, which provides extremely low on-resistance and excellent switching performance, suitable for various power management and switching applications.
**FQB65N06-VB** is a high-performance N-channel MOSFET in TO263 package, designed for high current and medium voltage applications. The MOSFET has a maximum drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 1.7V. Its on-resistance (RDS(ON)) is 12mΩ at a gate-source voltage of 4.5V and 11mΩ at a gate-source voltage of 10V, and the drain current (ID) can reach 75A. FQB65N06-VB uses Trench technology, which provides extremely low on-resistance and excellent switching performance, suitable for various power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description of FQB65N06-VB
| **Parameter** | **Value** | **Unit** | **Description** |
|----------------------------|------------------------------|--------------|--------------------------------------|
| **Model** | FQB65N06-VB | | |
| **Package type** | TO263 | | Compact package, suitable for high-density circuit design|
| **Channel configuration** | Single N-channel| | |
| **Drain-source voltage (VDS)** | 60 | V | Maximum withstand voltage|
| **Gate-source voltage (VGS)** | ±20 | V | Maximum gate-source voltage range|
| **Threshold voltage (Vth)** | 1.7 | V | Minimum voltage required to turn on|
| **On-resistance (RDS(ON))** | 12 / 11 | mΩ @ VGS=4.5V / VGS=10V | Low on-resistance, reduced conduction loss|
| **Drain current (ID)** | 75 | A | Maximum continuous drain current|
| **Technology** | Trench | | Trench technology, providing higher switching speed and lower on-resistance|
| **Operating junction temperature range (Tj)** | -55 ~ +150 | °C | Wide temperature range, suitable for various environments|
| **Power consumption (Pd)** | 90 | W | High power handling capability|
| **Input capacitance (Ciss)** | 3300 | pF | Low input capacitance, improved switching speed|
| **Reverse recovery time (trr)** | 150 | ns | Fast recovery time, reduced switching loss|
| **Parameter** | **Value** | **Unit** | **Description** |
|----------------------------|------------------------------|--------------|--------------------------------------|
| **Model** | FQB65N06-VB | | |
| **Package type** | TO263 | | Compact package, suitable for high-density circuit design|
| **Channel configuration** | Single N-channel| | |
| **Drain-source voltage (VDS)** | 60 | V | Maximum withstand voltage|
| **Gate-source voltage (VGS)** | ±20 | V | Maximum gate-source voltage range|
| **Threshold voltage (Vth)** | 1.7 | V | Minimum voltage required to turn on|
| **On-resistance (RDS(ON))** | 12 / 11 | mΩ @ VGS=4.5V / VGS=10V | Low on-resistance, reduced conduction loss|
| **Drain current (ID)** | 75 | A | Maximum continuous drain current|
| **Technology** | Trench | | Trench technology, providing higher switching speed and lower on-resistance|
| **Operating junction temperature range (Tj)** | -55 ~ +150 | °C | Wide temperature range, suitable for various environments|
| **Power consumption (Pd)** | 90 | W | High power handling capability|
| **Input capacitance (Ciss)** | 3300 | pF | Low input capacitance, improved switching speed|
| **Reverse recovery time (trr)** | 150 | ns | Fast recovery time, reduced switching loss|
Domain and module applications：
3. Application fields and module examples
**FQB65N06-VB**'s high current and low on-resistance characteristics make it have important application value in many fields. The following are the main application fields and module examples of this product:
#### 1. **Power management**
In power management systems, FQB65N06-VB provides extremely low on-resistance and high current capability, making it an ideal choice for efficient DC-DC converters. Its low on-resistance can reduce power loss, improve power conversion efficiency, and ensure stable and reliable operation of the system.
#### 2. **Power switch**
In power switching applications, FQB65N06-VB's high current handling capability and low on-resistance make it suitable for switching control of high-power loads. Whether used for power switches, load switches or switching power supplies, this MOSFET can provide excellent performance.
#### 3. **Motor drive control**
In motor drive control systems, FQB65N06-VB can be used to control the start, run and stop of motors. Its high current capability and low on-resistance can effectively drive motors, improve the efficiency and performance of motor control systems, and is suitable for stepper motors and servo motor controllers.
#### 4. **Automotive electronics**
In the automotive electronics field, FQB65N06-VB can be used in various automotive electronic control modules, such as battery management systems, electric power steering systems, and power distribution modules. Its high current and low on-resistance characteristics can meet the high efficiency requirements of automotive electrical systems.
#### 5. **LED drive**
In LED drive applications, FQB65N06-VB's low on-resistance and high current handling capability are suitable for high-power LED drivers. It can effectively drive LED lamps, improve the efficiency and stability of lighting systems, and is suitable for commercial and industrial lighting solutions.
**Summary**, FQB65N06-VB provides reliable solutions in power management, power switching, motor drive, automotive electronics and LED drive with its high current, low on-resistance and Trench technology. Its excellent switching performance and low power consumption make it suitable for a variety of high-efficiency application scenarios.
**FQB65N06-VB**'s high current and low on-resistance characteristics make it have important application value in many fields. The following are the main application fields and module examples of this product:
#### 1. **Power management**
In power management systems, FQB65N06-VB provides extremely low on-resistance and high current capability, making it an ideal choice for efficient DC-DC converters. Its low on-resistance can reduce power loss, improve power conversion efficiency, and ensure stable and reliable operation of the system.
#### 2. **Power switch**
In power switching applications, FQB65N06-VB's high current handling capability and low on-resistance make it suitable for switching control of high-power loads. Whether used for power switches, load switches or switching power supplies, this MOSFET can provide excellent performance.
#### 3. **Motor drive control**
In motor drive control systems, FQB65N06-VB can be used to control the start, run and stop of motors. Its high current capability and low on-resistance can effectively drive motors, improve the efficiency and performance of motor control systems, and is suitable for stepper motors and servo motor controllers.
#### 4. **Automotive electronics**
In the automotive electronics field, FQB65N06-VB can be used in various automotive electronic control modules, such as battery management systems, electric power steering systems, and power distribution modules. Its high current and low on-resistance characteristics can meet the high efficiency requirements of automotive electrical systems.
#### 5. **LED drive**
In LED drive applications, FQB65N06-VB's low on-resistance and high current handling capability are suitable for high-power LED drivers. It can effectively drive LED lamps, improve the efficiency and stability of lighting systems, and is suitable for commercial and industrial lighting solutions.
**Summary**, FQB65N06-VB provides reliable solutions in power management, power switching, motor drive, automotive electronics and LED drive with its high current, low on-resistance and Trench technology. Its excellent switching performance and low power consumption make it suitable for a variety of high-efficiency application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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