FQB630TM-VB Product details
Product introduction:
FQB630TM-VB is a high voltage N-channel MOSFET designed in TO263 package. It supports drain-source voltage (VDS) up to 200V and gate-source voltage (VGS) of ±20V, which is very suitable for medium voltage power supply and switching applications. The turn-on voltage (Vth) of this MOSFET is 3V, the on-resistance (RDS(ON)) is 300mΩ (@VGS=10V), and the maximum drain current (ID) is 10A. FQB630TM-VB adopts Trench technology, with excellent switching efficiency and low conduction loss, suitable for electronic systems requiring high voltage and stable performance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | 300mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 300mΩ @ VGS=10V
- **Maximum drain current (ID)**: 10A
- **Technology type**: Trench technology
- **Power consumption**: Provides optimized switching performance and low conduction loss
- **Package size**: TO263 package, providing good heat dissipation performance and moderate volume
- **Operating temperature range**: Suitable for various industrial and commercial applications
Domain and module applications:
The high voltage capability and reliable switching performance of FQB630TM-VB MOSFET make it suitable for the following fields and modules:
1. **Power management system**: In power management and DC-DC converters, FQB630TM-VB provides stable high voltage switching function, ensuring efficient power conversion and low conduction loss. It is suitable for computer power supplies, power modules and industrial power management systems, helping to improve the efficiency and stability of the overall power system.
2. **High voltage switching applications**: The 200V drain-source voltage capability of FQB630TM-VB makes it very suitable for high voltage switching applications such as relay drive and high voltage load control. It can provide an effective switching solution in application scenarios that require high voltage and reliable switching performance.
3. **Automotive Electronic Systems**: In automotive electronic systems, such as battery management systems and power control modules for electric vehicles, the FQB630TM-VB provides high voltage support and efficient switching functions. Its high voltage and stability make it suitable for battery protection, motor control, and other automotive power management functions.
4. **Industrial Automation**: The FQB630TM-VB performs well in industrial automation equipment, such as motor drives and industrial control systems. It can be used for high voltage signal switching and load control, improving the performance and reliability of equipment and ensuring safe operation in high voltage environments.
These application examples demonstrate the wide applicability and superior performance of the FQB630TM-VB MOSFET in high voltage and medium current applications.
Technical support:
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