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FQB5P10-VB Product details
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Product Introduction
The FQB5P10-VB is a high-performance single P-channel MOSFET in a TO263 package designed for negative voltage applications. Using Trench technology, this MOSFET has a drain-source voltage of -100V and a drain current handling capability of -37A. Its on-resistance is 50mΩ at a gate-source voltage of 4.5V and 40mΩ at a gate-source voltage of 10V, and its turn-on voltage is -2V. Features of the FQB5P10-VB include low on-resistance and high current carrying capability, making it an excellent performer in applications that require efficient switching and low power consumption, such as negative voltage power management and reverse current protection.
The FQB5P10-VB is a high-performance single P-channel MOSFET in a TO263 package designed for negative voltage applications. Using Trench technology, this MOSFET has a drain-source voltage of -100V and a drain current handling capability of -37A. Its on-resistance is 50mΩ at a gate-source voltage of 4.5V and 40mΩ at a gate-source voltage of 10V, and its turn-on voltage is -2V. Features of the FQB5P10-VB include low on-resistance and high current carrying capability, making it an excellent performer in applications that require efficient switching and low power consumption, such as negative voltage power management and reverse current protection.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Parameter description
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 50mΩ @ VGS=4.5V
- 40mΩ @ VGS=10V
- **Drain current (ID)**: -37A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 50mΩ @ VGS=4.5V
- 40mΩ @ VGS=10V
- **Drain current (ID)**: -37A
- **Technology**: Trench
Domain and module applications：
Application areas and module examples
1. **Negative voltage power management**: FQB5P10-VB is very suitable for negative voltage power management systems, such as negative voltage DC-DC converters and negative voltage regulators. Its -100V drain-source voltage capability and low on-resistance (40mΩ@VGS=10V) enable it to effectively handle high current applications in negative voltage environments, improve system efficiency and reduce power consumption.
2. **Reverse current protection**: In circuits that require reverse current protection, such as inverters and battery protection circuits, FQB5P10-VB provides reliable reverse current blocking capability. Its low on-resistance and high current handling capability enable it to effectively block the flow of unwanted reverse current in the protection circuit, ensuring the safety and stability of the system.
3. **High power switching applications**: FQB5P10-VB is also suitable for high power switching applications, such as high-efficiency power switches and power amplifiers. Its low on-resistance and high current carrying capacity enable it to provide stable performance and efficient current control in high-power switching scenarios, suitable for a variety of high-power electronic devices.
Overall, the low on-resistance, high current handling capability and Trench technology of FQB5P10-VB enable it to perform well in applications such as negative voltage power management, reverse current protection and high-power switching, providing an efficient and reliable solution.
1. **Negative voltage power management**: FQB5P10-VB is very suitable for negative voltage power management systems, such as negative voltage DC-DC converters and negative voltage regulators. Its -100V drain-source voltage capability and low on-resistance (40mΩ@VGS=10V) enable it to effectively handle high current applications in negative voltage environments, improve system efficiency and reduce power consumption.
2. **Reverse current protection**: In circuits that require reverse current protection, such as inverters and battery protection circuits, FQB5P10-VB provides reliable reverse current blocking capability. Its low on-resistance and high current handling capability enable it to effectively block the flow of unwanted reverse current in the protection circuit, ensuring the safety and stability of the system.
3. **High power switching applications**: FQB5P10-VB is also suitable for high power switching applications, such as high-efficiency power switches and power amplifiers. Its low on-resistance and high current carrying capacity enable it to provide stable performance and efficient current control in high-power switching scenarios, suitable for a variety of high-power electronic devices.
Overall, the low on-resistance, high current handling capability and Trench technology of FQB5P10-VB enable it to perform well in applications such as negative voltage power management, reverse current protection and high-power switching, providing an efficient and reliable solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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