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FQB5P10TM-VB Product details
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Product Introduction
FQB5P10TM-VB is a high-performance P-channel MOSFET in TO263 package. This MOSFET adopts Trench technology and is designed for low voltage and high current applications. It has a drain-source breakdown voltage of -100V and low on-resistance, suitable for electronic devices that require efficient switching and low power consumption. FQB5P10TM-VB is particularly suitable for power management and load switching, providing excellent performance and reliability.
FQB5P10TM-VB is a high-performance P-channel MOSFET in TO263 package. This MOSFET adopts Trench technology and is designed for low voltage and high current applications. It has a drain-source breakdown voltage of -100V and low on-resistance, suitable for electronic devices that require efficient switching and low power consumption. FQB5P10TM-VB is particularly suitable for power management and load switching, providing excellent performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single P-channel
- **Drain-source breakdown voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 240mΩ @ VGS=4.5V
- 200mΩ @ VGS=10V
- **Maximum drain current (ID)**: -12A
- **Technology type**: Trench
- **Package type**: TO263
- **Channel configuration**: Single P-channel
- **Drain-source breakdown voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 240mΩ @ VGS=4.5V
- 200mΩ @ VGS=10V
- **Maximum drain current (ID)**: -12A
- **Technology type**: Trench
Domain and module applications：
Applications and module examples
1. **Power switch**: FQB5P10TM-VB performs well in power switching applications, and its low on-resistance and high drain-source breakdown voltage make it an ideal choice for controlling power paths. It can be used in switching applications in power modules, providing high efficiency and stability.
2. **Load switch**: FQB5P10TM-VB can be used as a load switch in situations where high current loads need to be controlled, such as battery-powered devices and power management systems. Its low on-resistance helps reduce power consumption and improve system efficiency.
3. **Power management**: In power management modules, this MOSFET can be used for current monitoring, overcurrent protection, and load control. Its excellent switching performance and low on-resistance enable precise control and high efficiency in power management systems.
4. **High voltage switch**: In switch applications that require high voltage tolerance, such as switching control of high voltage power supplies, the -100V drain-source breakdown voltage of FQB5P10TM-VB provides a reliable solution to ensure system stability and safety.
With its high voltage tolerance, low on-resistance and excellent switching performance, FQB5P10TM-VB provides efficient and reliable solutions in application areas such as power switching, load switching, power management and high voltage switching.
1. **Power switch**: FQB5P10TM-VB performs well in power switching applications, and its low on-resistance and high drain-source breakdown voltage make it an ideal choice for controlling power paths. It can be used in switching applications in power modules, providing high efficiency and stability.
2. **Load switch**: FQB5P10TM-VB can be used as a load switch in situations where high current loads need to be controlled, such as battery-powered devices and power management systems. Its low on-resistance helps reduce power consumption and improve system efficiency.
3. **Power management**: In power management modules, this MOSFET can be used for current monitoring, overcurrent protection, and load control. Its excellent switching performance and low on-resistance enable precise control and high efficiency in power management systems.
4. **High voltage switch**: In switch applications that require high voltage tolerance, such as switching control of high voltage power supplies, the -100V drain-source breakdown voltage of FQB5P10TM-VB provides a reliable solution to ensure system stability and safety.
With its high voltage tolerance, low on-resistance and excellent switching performance, FQB5P10TM-VB provides efficient and reliable solutions in application areas such as power switching, load switching, power management and high voltage switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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