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FQB5N80-VB Product details
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Product Introduction
FQB5N80-VB is a high voltage single N-channel MOSFET in TO252 package, designed for high voltage and medium current applications. It has a drain-source voltage (VDS) of up to 800V, a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. The MOSFET adopts SJ_Multi-EPI technology, has an on-resistance of 1100mΩ (RDS(ON)@VGS=10V), and can handle a drain current (ID) of up to 5A. It is designed for applications that require high voltage tolerance and stability.
FQB5N80-VB is a high voltage single N-channel MOSFET in TO252 package, designed for high voltage and medium current applications. It has a drain-source voltage (VDS) of up to 800V, a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. The MOSFET adopts SJ_Multi-EPI technology, has an on-resistance of 1100mΩ (RDS(ON)@VGS=10V), and can handle a drain current (ID) of up to 5A. It is designed for applications that require high voltage tolerance and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ@VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ@VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
FQB5N80-VB MOSFET is suitable for multiple applications due to its high voltage tolerance and medium current handling capability. In a switching power supply (SMPS), it can perform stable power switching in a high voltage environment and optimize power conversion performance. In a high-voltage motor drive system, this MOSFET can handle large voltage loads to ensure stable operation of the motor. In a high-voltage DC-DC converter (DC-DC converter), FQB5N80-VB is suitable for high-voltage power conversion to ensure the reliability and efficiency of the conversion process. In addition, it is also suitable for industrial control systems and high-voltage load switching applications, providing reliable performance under high voltage and medium current. Its high drain-source voltage characteristics make it particularly suitable for various electronic devices and power systems that require high voltage resistance.
FQB5N80-VB MOSFET is suitable for multiple applications due to its high voltage tolerance and medium current handling capability. In a switching power supply (SMPS), it can perform stable power switching in a high voltage environment and optimize power conversion performance. In a high-voltage motor drive system, this MOSFET can handle large voltage loads to ensure stable operation of the motor. In a high-voltage DC-DC converter (DC-DC converter), FQB5N80-VB is suitable for high-voltage power conversion to ensure the reliability and efficiency of the conversion process. In addition, it is also suitable for industrial control systems and high-voltage load switching applications, providing reliable performance under high voltage and medium current. Its high drain-source voltage characteristics make it particularly suitable for various electronic devices and power systems that require high voltage resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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