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FQB55N10TM-VB Product details
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FQB55N10TM-VB MOSFET Product Introduction
FQB55N10TM-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and high current applications. This MOSFET can withstand drain-source voltage (VDS) up to 100V and supports gate-source voltage (VGS) of ±20V. Its threshold voltage is 1.8V, on-resistance is 20mΩ at a gate drive voltage of 10V, and maximum drain current is 70A. FQB55N10TM-VB uses Trench technology, which improves switching efficiency and performance, making it excel in high power and high frequency applications.
FQB55N10TM-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and high current applications. This MOSFET can withstand drain-source voltage (VDS) up to 100V and supports gate-source voltage (VGS) of ±20V. Its threshold voltage is 1.8V, on-resistance is 20mΩ at a gate drive voltage of 10V, and maximum drain current is 70A. FQB55N10TM-VB uses Trench technology, which improves switching efficiency and performance, making it excel in high power and high frequency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
FQB55N10TM-VB MOSFET Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 20mΩ @ VGS=10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 20mΩ @ VGS=10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
The high current handling capability and low on-resistance of the FQB55N10TM-VB enable it to excel in a number of areas and modules:
- **Power Management**: In power management systems, such as DC-DC converters and switching power supplies, the low on-resistance and high current handling capability of the FQB55N10TM-VB enable it to effectively control the flow of current and improve the efficiency and stability of the power supply.
- **Battery Management System**: This MOSFET can be used in battery management systems to control the charging and discharging process of the battery. Its high current handling capability and low on-resistance help optimize system performance and extend battery life.
- **LED Drive**: In LED drive circuits, the FQB55N10TM-VB can be used as a switching element to control the switching of LEDs. Due to its low on-resistance and high switching speed, it can achieve efficient LED driving and brightness control.
- **Motor Control**: In motor control systems, such as DC motor drives, the high current carrying capacity and low on-resistance of the FQB55N10TM-VB enable it to efficiently control the operation of the motor and provide a stable current supply.
- **Automotive Electronics**: In automotive electronic applications, such as power switching and motor drives, the high current handling capability and reliability of the FQB55N10TM-VB enable it to meet the requirements of automotive electronic systems for high-performance components.
The high voltage withstand capability and excellent on-performance of the FQB55N10TM-VB enable it to excel in a variety of high-power and high-current applications.
The high current handling capability and low on-resistance of the FQB55N10TM-VB enable it to excel in a number of areas and modules:
- **Power Management**: In power management systems, such as DC-DC converters and switching power supplies, the low on-resistance and high current handling capability of the FQB55N10TM-VB enable it to effectively control the flow of current and improve the efficiency and stability of the power supply.
- **Battery Management System**: This MOSFET can be used in battery management systems to control the charging and discharging process of the battery. Its high current handling capability and low on-resistance help optimize system performance and extend battery life.
- **LED Drive**: In LED drive circuits, the FQB55N10TM-VB can be used as a switching element to control the switching of LEDs. Due to its low on-resistance and high switching speed, it can achieve efficient LED driving and brightness control.
- **Motor Control**: In motor control systems, such as DC motor drives, the high current carrying capacity and low on-resistance of the FQB55N10TM-VB enable it to efficiently control the operation of the motor and provide a stable current supply.
- **Automotive Electronics**: In automotive electronic applications, such as power switching and motor drives, the high current handling capability and reliability of the FQB55N10TM-VB enable it to meet the requirements of automotive electronic systems for high-performance components.
The high voltage withstand capability and excellent on-performance of the FQB55N10TM-VB enable it to excel in a variety of high-power and high-current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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