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FQB55N06TM-VB Product details
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1. FQB55N06TM-VB MOSFET Product Introduction
FQB55N06TM-VB is a high-performance single N-channel MOSFET in TO263 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 60V, suitable for medium and low voltage switching and power management applications. The gate-source voltage (VGS) range of this MOSFET is ±20V, providing flexible control options. The threshold voltage (Vth) of FQB55N06TM-VB is 1.7V, which can turn on quickly at a lower gate voltage. Its on-resistance (RDS(ON)) is 12mΩ at VGS of 4.5V and 11mΩ at VGS of 10V, and can support a drain current of up to 75A. Based on Trench technology, the device has excellent switching performance and low conduction losses, suitable for efficient power conversion and load switching applications.
FQB55N06TM-VB is a high-performance single N-channel MOSFET in TO263 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 60V, suitable for medium and low voltage switching and power management applications. The gate-source voltage (VGS) range of this MOSFET is ±20V, providing flexible control options. The threshold voltage (Vth) of FQB55N06TM-VB is 1.7V, which can turn on quickly at a lower gate voltage. Its on-resistance (RDS(ON)) is 12mΩ at VGS of 4.5V and 11mΩ at VGS of 10V, and can support a drain current of up to 75A. Based on Trench technology, the device has excellent switching performance and low conduction losses, suitable for efficient power conversion and load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description of FQB55N06TM-VB MOSFET
1. **Package**: TO263
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
7. **Drain current (ID)**: 75A
8. **Technology**: Trench technology
9. **Maximum junction temperature (Tj)**: Up to 150°C
10. **Input capacitance (Ciss)**: Medium, suitable for medium frequency switching applications
11. **Switching speed**: Fast, suitable for high frequency switching
12. **Drain-source diode reverse recovery time (trr)**: Short, supports high frequency operation
1. **Package**: TO263
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
7. **Drain current (ID)**: 75A
8. **Technology**: Trench technology
9. **Maximum junction temperature (Tj)**: Up to 150°C
10. **Input capacitance (Ciss)**: Medium, suitable for medium frequency switching applications
11. **Switching speed**: Fast, suitable for high frequency switching
12. **Drain-source diode reverse recovery time (trr)**: Short, supports high frequency operation
Domain and module applications：
3. Application fields and module examples of FQB55N06TM-VB MOSFET
1. **DC-DC converter**:
- FQB55N06TM-VB is very suitable for the design of DC-DC converters. Its 60V drain-source voltage and low on-resistance ensure efficient power conversion. It is suitable for computer power supplies, communication equipment power supplies and other medium and low voltage power conversion applications.
2. **Motor drive**:
- In motor drive applications, FQB55N06TM-VB provides powerful switching capabilities, and its 75A drain current supports stable control of high current loads. It is very suitable for power tools, household appliance motors and industrial drive systems.
3. **Switching power supply**:
- In switching power supply modules, FQB55N06TM-VB can effectively perform power switching operations. Its Trench technology ensures low conduction loss and high switching speed, which is suitable for power management modules that require efficient switching operations.
4. **Load Switch**:
- For load switch applications, the high current capability and low on-resistance of FQB55N06TM-VB provide reliable performance. It can handle load currents up to 75A and is suitable for power management, battery protection and other load control applications.
FQB55N06TM-VB MOSFET is widely used in power conversion, motor drive and load switching with its low on-resistance, high current capability and excellent switching performance, providing efficient and reliable power management solutions.
1. **DC-DC converter**:
- FQB55N06TM-VB is very suitable for the design of DC-DC converters. Its 60V drain-source voltage and low on-resistance ensure efficient power conversion. It is suitable for computer power supplies, communication equipment power supplies and other medium and low voltage power conversion applications.
2. **Motor drive**:
- In motor drive applications, FQB55N06TM-VB provides powerful switching capabilities, and its 75A drain current supports stable control of high current loads. It is very suitable for power tools, household appliance motors and industrial drive systems.
3. **Switching power supply**:
- In switching power supply modules, FQB55N06TM-VB can effectively perform power switching operations. Its Trench technology ensures low conduction loss and high switching speed, which is suitable for power management modules that require efficient switching operations.
4. **Load Switch**:
- For load switch applications, the high current capability and low on-resistance of FQB55N06TM-VB provide reliable performance. It can handle load currents up to 75A and is suitable for power management, battery protection and other load control applications.
FQB55N06TM-VB MOSFET is widely used in power conversion, motor drive and load switching with its low on-resistance, high current capability and excellent switching performance, providing efficient and reliable power management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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