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FQB50N06TM-NL-VB Product details
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1. FQB50N06TM-NL-VB Product Introduction
FQB50N06TM-NL-VB is a high-performance single-channel N-type MOSFET in TO263 package. This MOSFET can withstand a drain-source voltage (VDS) of up to 60V and a maximum drain current (ID) of 75A. Its gate threshold voltage (Vth) is 1.7V, which enables it to be stably turned on at a lower gate-source voltage. FQB50N06TM-NL-VB is manufactured using Trench technology and provides a low on-resistance (RDS(ON)), which is 12mΩ at a gate-source voltage (VGS) of 4.5V and 11mΩ at 10V. This high current and low on-resistance feature makes it suitable for a variety of high-efficiency switching applications.
FQB50N06TM-NL-VB is a high-performance single-channel N-type MOSFET in TO263 package. This MOSFET can withstand a drain-source voltage (VDS) of up to 60V and a maximum drain current (ID) of 75A. Its gate threshold voltage (Vth) is 1.7V, which enables it to be stably turned on at a lower gate-source voltage. FQB50N06TM-NL-VB is manufactured using Trench technology and provides a low on-resistance (RDS(ON)), which is 12mΩ at a gate-source voltage (VGS) of 4.5V and 11mΩ at 10V. This high current and low on-resistance feature makes it suitable for a variety of high-efficiency switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. FQB50N06TM-NL-VB Detailed parameter description
1. **Package type**: TO263
2. **Polarity configuration**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
7. **Drain current (ID)**: 75A
8. **Technology type**: Trench
1. **Package type**: TO263
2. **Polarity configuration**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
7. **Drain current (ID)**: 75A
8. **Technology type**: Trench
Domain and module applications：
3. Application fields and module examples of FQB50N06TM-NL-VB
The high current and low on-resistance characteristics of FQB50N06TM-NL-VB MOSFET make it widely used in many fields and modules:
1. **DC-DC converter**: In the DC-DC converter, FQB50N06TM-NL-VB can be used as a high-efficiency switching element to handle an input voltage of 60V and a current of up to 75A. Its low on-resistance ensures high conversion efficiency and low power consumption, and is suitable for computer power supplies, industrial power supplies, and communication equipment.
2. **Motor drive control**: In the motor drive control system, FQB50N06TM-NL-VB can be used as a high-current switch to control the start, stop, and speed regulation of the motor. Its high current carrying capacity and low on-resistance ensure the efficient operation and reliability of the motor, and is suitable for various motor drive applications.
3. **Power Switch**: FQB50N06TM-NL-VB is suitable for power switch applications such as switch control in power modules and switching of high current loads. Its low on-resistance and high current handling capability provide efficient switch control and reduce power loss.
4. **Battery Management System (BMS)**: In the battery management system, this MOSFET can be used for switching and protecting high current batteries to ensure the stability and safety of the system. Its low on-resistance helps improve the efficiency and life of the battery system, suitable for electric vehicles and energy storage systems.
5. **Overcurrent Protection Circuit**: FQB50N06TM-NL-VB can be used in overcurrent protection circuits as a switch element to handle abnormal current and protect other electronic components. Its high current capability and low on-resistance make it perform well in protection circuits and suitable for various current protection applications.
The excellent performance of FQB50N06TM-NL-VB MOSFET makes it excel in high-efficiency switching applications requiring high current and low on-resistance.
The high current and low on-resistance characteristics of FQB50N06TM-NL-VB MOSFET make it widely used in many fields and modules:
1. **DC-DC converter**: In the DC-DC converter, FQB50N06TM-NL-VB can be used as a high-efficiency switching element to handle an input voltage of 60V and a current of up to 75A. Its low on-resistance ensures high conversion efficiency and low power consumption, and is suitable for computer power supplies, industrial power supplies, and communication equipment.
2. **Motor drive control**: In the motor drive control system, FQB50N06TM-NL-VB can be used as a high-current switch to control the start, stop, and speed regulation of the motor. Its high current carrying capacity and low on-resistance ensure the efficient operation and reliability of the motor, and is suitable for various motor drive applications.
3. **Power Switch**: FQB50N06TM-NL-VB is suitable for power switch applications such as switch control in power modules and switching of high current loads. Its low on-resistance and high current handling capability provide efficient switch control and reduce power loss.
4. **Battery Management System (BMS)**: In the battery management system, this MOSFET can be used for switching and protecting high current batteries to ensure the stability and safety of the system. Its low on-resistance helps improve the efficiency and life of the battery system, suitable for electric vehicles and energy storage systems.
5. **Overcurrent Protection Circuit**: FQB50N06TM-NL-VB can be used in overcurrent protection circuits as a switch element to handle abnormal current and protect other electronic components. Its high current capability and low on-resistance make it perform well in protection circuits and suitable for various current protection applications.
The excellent performance of FQB50N06TM-NL-VB MOSFET makes it excel in high-efficiency switching applications requiring high current and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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