FQB50N06L-VB Product details
Product introduction:
FQB50N06L-VB is a high-performance N-channel MOSFET with a TO263 package type. This MOSFET is suitable for switching applications requiring high current and medium voltage, providing a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. It has an extremely low on-resistance (RDS(ON)), which is 11mΩ at VGS=10V and 12mΩ at VGS=4.5V, and supports a maximum drain current (ID) of up to 75A. FQB50N06L-VB uses Trench technology and has excellent switching efficiency and low power consumption, making it very suitable for high-current and high-efficiency power electronic systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 12mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 11mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology type**: Trench technology
- **Power consumption**: Optimized design for low conduction loss and high switching efficiency
- **Package size**: TO263 package provides good heat dissipation and moderate size
- **Operating temperature range**: Suitable for a wide range of industrial and commercial electronic applications
Domain and module applications:
The high current capability and low on-resistance of FQB50N06L-VB MOSFET make it excel in multiple fields and modules, including:
1. **Power management system**: In power management systems, such as DC-DC converters and power modules, the low on-resistance and high current capability of FQB50N06L-VB ensure efficient power conversion and low power loss. It is particularly suitable for efficient power adapters, computer power supplies and industrial power modules to improve the efficiency of the overall power system.
2. **Power tools and home appliances**: FQB50N06L-VB can be applied to motor drive and load control in power tools and home appliances. Its high current capability and low on-resistance make it an ideal choice for motor control circuits in power tools and current switches in home appliances, providing reliable operation and efficient performance.
3. **Automotive Electronic Systems**: In automotive electronic systems, such as battery management systems and motor control units, the medium voltage and high current capabilities of the FQB50N06L-VB provide reliable power control. Suitable for power control modules in electric and hybrid vehicles, helping to optimize the efficiency of battery management and motor drive systems.
4. **Industrial Automation**: The FQB50N06L-VB demonstrates its advantages of high current and low on-resistance in industrial automation equipment, such as relay drive and switch control applications. It is suitable for signal switching and current control of automation equipment, improving the performance and response speed of the equipment.
These application examples demonstrate the wide applicability and superior performance of the FQB50N06L-VB MOSFET in medium voltage and high current applications.
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