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FQB50N03-VB Product details
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Product Introduction
FQB50N03-VB is a high-performance N-channel MOSFET in TO263 package, designed for low voltage, high current applications. It uses Trench technology, has a 30V drain-source breakdown voltage and very low on-resistance, making it excellent in high-efficiency switching and power management applications. With its high current handling capability and excellent switching performance, this MOSFET is very suitable for electronic devices and power modules that require high efficiency and low power consumption.
FQB50N03-VB is a high-performance N-channel MOSFET in TO263 package, designed for low voltage, high current applications. It uses Trench technology, has a 30V drain-source breakdown voltage and very low on-resistance, making it excellent in high-efficiency switching and power management applications. With its high current handling capability and excellent switching performance, this MOSFET is very suitable for electronic devices and power modules that require high efficiency and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology type**: Trench
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology type**: Trench
Domain and module applications：
Applications and module examples
1. **DC-DC converter**: FQB50N03-VB is suitable for high-efficiency DC-DC converter applications such as buck converters and boost converters. Its low on-resistance and high current handling capability can significantly improve conversion efficiency, reduce power consumption, and ensure stable voltage output.
2. **Motor drive**: In motor drive control systems, this MOSFET provides high current carrying capacity and low on-resistance, which is very suitable for efficient control and drive of motors, optimizing motor performance and power consumption.
3. **Power management module**: FQB50N03-VB can be used in various power management modules, such as power management ICs and power switches. Its excellent switching performance and low on-resistance ensure efficient power regulation and management, extending the service life of the equipment.
4. **Load Switch**: In applications that require controlling high current loads, such as switching power supplies and battery management systems, the high current handling capability and low on-resistance of the FQB50N03-VB help achieve efficient and reliable load switching.
With its high current handling capability, low on-resistance and excellent switching performance, the FQB50N03-VB provides efficient solutions in the fields of DC-DC converters, motor drives, power management modules and load switches.
1. **DC-DC converter**: FQB50N03-VB is suitable for high-efficiency DC-DC converter applications such as buck converters and boost converters. Its low on-resistance and high current handling capability can significantly improve conversion efficiency, reduce power consumption, and ensure stable voltage output.
2. **Motor drive**: In motor drive control systems, this MOSFET provides high current carrying capacity and low on-resistance, which is very suitable for efficient control and drive of motors, optimizing motor performance and power consumption.
3. **Power management module**: FQB50N03-VB can be used in various power management modules, such as power management ICs and power switches. Its excellent switching performance and low on-resistance ensure efficient power regulation and management, extending the service life of the equipment.
4. **Load Switch**: In applications that require controlling high current loads, such as switching power supplies and battery management systems, the high current handling capability and low on-resistance of the FQB50N03-VB help achieve efficient and reliable load switching.
With its high current handling capability, low on-resistance and excellent switching performance, the FQB50N03-VB provides efficient solutions in the fields of DC-DC converters, motor drives, power management modules and load switches.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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