FQB4N80-VB Product details
Product introduction:
FQB4N80-VB is a high voltage single N-channel power MOSFET in TO263 package. The drain-source voltage (VDS) of this MOSFET is up to 800V, supports a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. Its on-resistance (RDS(ON)) is 850mΩ at a gate-source voltage of 10V, and the maximum drain current (ID) is 7A. FQB4N80-VB uses SJ_Multi-EPI technology, which provides good current carrying capacity and stability in high voltage applications, and is suitable for high voltage applications in high voltage switches and power management systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | 850mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 850mΩ @ VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI
Domain and module applications:
The high voltage and relatively high on-resistance of the FQB4N80-VB make it of great application value in the following fields and modules:
1. **High voltage power switch**: Due to its ability to withstand drain-source voltages up to 800V, the FQB4N80-VB is ideal for high voltage switching applications such as high voltage power converters and power management systems. Its robust high voltage capability ensures safe and stable operation of the power system under high voltage conditions.
2. **Motor drive**: In high voltage motor drive systems, the FQB4N80-VB can be used to drive high power motors and inverters. This MOSFET can handle higher voltages and is suitable for motor control and drive applications in industrial automation.
3. **High Voltage Inverter**: In inverter applications, such as solar inverters or other high voltage inverter systems, the FQB4N80-VB provides the necessary voltage handling capability and stability to ensure the inverter operates effectively in high voltage environments.
4. **Power Protection**: In systems that require high voltage power protection, such as power protection circuits and overvoltage protection devices, the high voltage capability and stability of the FQB4N80-VB make it an ideal choice to effectively protect other components from voltage spikes.
5. **Power Conversion Module**: When used in high voltage power conversion modules, the FQB4N80-VB is able to operate stably under high voltage conditions, suitable for a variety of high voltage conversion and regulation applications, and improve system reliability and safety.
The high voltage handling capability and reliability of the FQB4N80-VB make it excel in high voltage switching, power management and protection applications, and is a key component in these application areas.
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