Featured Model

FQB4N80-VB Product details

Product introduction:

Product Introduction

FQB4N80-VB is a high voltage single N-channel power MOSFET in TO263 package. The drain-source voltage (VDS) of this MOSFET is up to 800V, supports a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. Its on-resistance (RDS(ON)) is 850mΩ at a gate-source voltage of 10V, and the maximum drain current (ID) is 7A. FQB4N80-VB uses SJ_Multi-EPI technology, which provides good current carrying capacity and stability in high voltage applications, and is suitable for high voltage applications in high voltage switches and power management systems.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 800V 3.5V 7A 850mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 800V 3.5V 7A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 800V 3.5V 7A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description

- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 850mΩ @ VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI

Domain and module applications:

Applications and modules

The high voltage and relatively high on-resistance of the FQB4N80-VB make it of great application value in the following fields and modules:

1. **High voltage power switch**: Due to its ability to withstand drain-source voltages up to 800V, the FQB4N80-VB is ideal for high voltage switching applications such as high voltage power converters and power management systems. Its robust high voltage capability ensures safe and stable operation of the power system under high voltage conditions.

2. **Motor drive**: In high voltage motor drive systems, the FQB4N80-VB can be used to drive high power motors and inverters. This MOSFET can handle higher voltages and is suitable for motor control and drive applications in industrial automation.

3. **High Voltage Inverter**: In inverter applications, such as solar inverters or other high voltage inverter systems, the FQB4N80-VB provides the necessary voltage handling capability and stability to ensure the inverter operates effectively in high voltage environments.

4. **Power Protection**: In systems that require high voltage power protection, such as power protection circuits and overvoltage protection devices, the high voltage capability and stability of the FQB4N80-VB make it an ideal choice to effectively protect other components from voltage spikes.

5. **Power Conversion Module**: When used in high voltage power conversion modules, the FQB4N80-VB is able to operate stably under high voltage conditions, suitable for a variety of high voltage conversion and regulation applications, and improve system reliability and safety.

The high voltage handling capability and reliability of the FQB4N80-VB make it excel in high voltage switching, power management and protection applications, and is a key component in these application areas.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat