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FQB4N80TM-VB Product details
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Product Introduction
FQB4N80TM-VB is a high voltage single N-channel MOSFET in TO263 package, designed for high voltage and medium current applications. It has a drain-source voltage (VDS) of up to 800V, a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. Using SJ_Multi-EPI technology, this MOSFET has an on-resistance of 850mΩ (RDS(ON)@VGS=10V) and can handle a drain current (ID) of up to 7A. It is designed to provide stable high voltage switching capability and is suitable for applications requiring high voltage tolerance and reliability.
FQB4N80TM-VB is a high voltage single N-channel MOSFET in TO263 package, designed for high voltage and medium current applications. It has a drain-source voltage (VDS) of up to 800V, a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. Using SJ_Multi-EPI technology, this MOSFET has an on-resistance of 850mΩ (RDS(ON)@VGS=10V) and can handle a drain current (ID) of up to 7A. It is designed to provide stable high voltage switching capability and is suitable for applications requiring high voltage tolerance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | 850mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 850mΩ@VGS=10V
- **Drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 850mΩ@VGS=10V
- **Drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
The high voltage tolerance and medium current handling capability of the FQB4N80TM-VB MOSFET make it suitable for a variety of application scenarios. In a switch mode power supply (SMPS), it can handle high voltage loads and ensure efficient power conversion. In motor drives and industrial control systems, this MOSFET can be used for power switches in high voltage environments to provide stable performance. In high voltage DC-DC converters (DC-DC converters), the FQB4N80TM-VB can be used to convert power while withstanding higher voltages and loads. In lighting and home appliance controls, this MOSFET can be used as a switching device for high voltage loads to ensure reliable operation of the equipment. Its high drain-source voltage characteristics make it particularly suitable for applications that require high voltage resistance.
The high voltage tolerance and medium current handling capability of the FQB4N80TM-VB MOSFET make it suitable for a variety of application scenarios. In a switch mode power supply (SMPS), it can handle high voltage loads and ensure efficient power conversion. In motor drives and industrial control systems, this MOSFET can be used for power switches in high voltage environments to provide stable performance. In high voltage DC-DC converters (DC-DC converters), the FQB4N80TM-VB can be used to convert power while withstanding higher voltages and loads. In lighting and home appliance controls, this MOSFET can be used as a switching device for high voltage loads to ensure reliable operation of the equipment. Its high drain-source voltage characteristics make it particularly suitable for applications that require high voltage resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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