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FQB4N20L-VB Product details
Back to previous pageProduct introduction：
1. FQB4N20L-VB Product Introduction
FQB4N20L-VB is a high voltage N-channel MOSFET packaged in TO263, designed for medium voltage and current applications. The drain-source voltage (VDS) of this MOSFET is 200V, which is suitable for switching operations requiring a 200V voltage. Its on-resistance (RDS(ON)) is 300mΩ@VGS=10V, providing a lower on-resistance, thereby optimizing switching performance and power loss. The drain current (ID) is 10A, which can handle medium current loads. FQB4N20L-VB uses Trench technology to effectively reduce on-resistance and switching losses, and is suitable for a variety of power electronics applications.
FQB4N20L-VB is a high voltage N-channel MOSFET packaged in TO263, designed for medium voltage and current applications. The drain-source voltage (VDS) of this MOSFET is 200V, which is suitable for switching operations requiring a 200V voltage. Its on-resistance (RDS(ON)) is 300mΩ@VGS=10V, providing a lower on-resistance, thereby optimizing switching performance and power loss. The drain current (ID) is 10A, which can handle medium current loads. FQB4N20L-VB uses Trench technology to effectively reduce on-resistance and switching losses, and is suitable for a variety of power electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | 300mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. FQB4N20L-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 300mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 300mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and module examples of FQB4N20L-VB
**1. Medium voltage power converter**
FQB4N20L-VB is very suitable for use in medium voltage power converters, such as efficient DC-DC converters and AC-DC power conversion modules. Its 200V drain-source voltage and 300mΩ on-resistance enable it to operate stably under medium voltage conditions, effectively convert voltage and provide high efficiency.
**2. Motor drive system**
In the motor drive system, FQB4N20L-VB can be used as a switching element in the motor drive module. Its higher drain current and moderate on-resistance enable it to handle the medium current load generated during the start-up and operation of the motor, and is suitable for DC motor control and stepper motor drive.
**3. Lighting control system**
This MOSFET is suitable for lighting control systems, such as LED drive circuits and high-efficiency lighting modules. Its medium voltage capability and low on-resistance enable it to efficiently switch lighting loads, providing stable and reliable control performance.
**4. Power Management System**
FQB4N20L-VB is also suitable for various power management systems, such as power regulators and power distribution modules. Its high voltage and moderate current capabilities enable it to handle switching operations in power systems, ensuring the stability and efficient operation of the system.
**1. Medium voltage power converter**
FQB4N20L-VB is very suitable for use in medium voltage power converters, such as efficient DC-DC converters and AC-DC power conversion modules. Its 200V drain-source voltage and 300mΩ on-resistance enable it to operate stably under medium voltage conditions, effectively convert voltage and provide high efficiency.
**2. Motor drive system**
In the motor drive system, FQB4N20L-VB can be used as a switching element in the motor drive module. Its higher drain current and moderate on-resistance enable it to handle the medium current load generated during the start-up and operation of the motor, and is suitable for DC motor control and stepper motor drive.
**3. Lighting control system**
This MOSFET is suitable for lighting control systems, such as LED drive circuits and high-efficiency lighting modules. Its medium voltage capability and low on-resistance enable it to efficiently switch lighting loads, providing stable and reliable control performance.
**4. Power Management System**
FQB4N20L-VB is also suitable for various power management systems, such as power regulators and power distribution modules. Its high voltage and moderate current capabilities enable it to handle switching operations in power systems, ensuring the stability and efficient operation of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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