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FQB47P06-VB Product details

Product introduction:

FQB47P06-VB MOSFET Product Introduction

FQB47P06-VB is a high-performance P-channel MOSFET in a TO263 package designed for low voltage and high current applications. This MOSFET can withstand drain-source voltages (VDS) up to -60V and supports gate-source voltages (VGS) of ±20V, making it excel in high current and low voltage environments. Its threshold voltage is -1.7V, its on-resistance is 25mΩ at a gate drive voltage of 4.5V and 19mΩ at 10V, and its maximum drain current is -80A. FQB47P06-VB uses Trench technology, which can significantly improve switching speed and efficiency, making it an ideal choice for high power switching and power management applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-P -60V -1.7V -80A 19mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-P -60V -1.7V -80A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-P -60V -1.7V -80A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-P
FQB47P06-VB MOSFET Detailed parameter description

- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**: 25mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 19mΩ @ VGS=10V
- **Drain current (ID)**: -80A
- **Technology**: Trench

Domain and module applications:

Applications and modules

The high current and low on-resistance of the FQB47P06-VB MOSFET enable it to excel in the following applications:

- **Power Switch**: In power switching applications, such as DC-DC converters and switching power supplies, the low on-resistance and high current handling capability of the FQB47P06-VB enable it to efficiently control the flow of current, improving the efficiency and stability of the power supply.

- **Load Switch**: This MOSFET is suitable for high-current load switching applications, such as load switching in power supplies. Its high current carrying capability and low on-resistance ensure reliable switching performance under heavy load conditions.

- **Battery Management System**: In battery management systems, the FQB47P06-VB is used to control the charging and discharging process of the battery. Its high current handling capability and low on-resistance help improve the efficiency of the system and extend the battery life.

- **LED Driver**: In LED driver circuits, FQB47P06-VB can be used as a switch element to control the switching of LEDs. Due to its low on-resistance and high switching speed, it can achieve efficient LED driving and brightness adjustment.

- **Automotive Electronics**: In automotive electronic systems, such as motor control and power management modules, FQB47P06-VB can be used for high current switching applications. Its stable performance and high current carrying capacity meet the high reliability requirements of automotive electronic systems.

The high current handling capability and low on-resistance of FQB47P06-VB make it excellent in various high current and low voltage switching and power management applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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