Featured Model

Last updated:

FQB46N15-VB Product details

Product introduction:

1. FQB46N15-VB MOSFET Product Introduction

FQB46N15-VB is a high-efficiency single N-channel MOSFET in TO263 package, designed for medium voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 150V, which is suitable for switching and power conversion applications that need to handle medium voltage. Its gate-source voltage (VGS) range is ±20V, providing flexible control options. The threshold voltage (Vth) of FQB46N15-VB is 3V, ensuring stable conduction under appropriate gate voltage. The on-resistance (RDS(ON)) is 35mΩ, and it can support a drain current of up to 45A at a VGS of 10V. Based on Trench technology, the device has excellent switching performance and low conduction losses, and is suitable for high-efficiency power conversion and load control applications.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 150V 3V 45A 35mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 150V 3V 45A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 150V 3V 45A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
II. Detailed parameter description of FQB46N15-VB MOSFET

1. **Package**: TO263
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 150V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**: 35mΩ @ VGS=10V
7. **Drain current (ID)**: 45A
8. **Technology**: Trench technology
9. **Maximum junction temperature (Tj)**: Up to 150°C
10. **Input capacitance (Ciss)**: Medium, suitable for medium-frequency switching applications
11. **Switching speed**: Fast, suitable for high-frequency switching
12. **Drain-source diode reverse recovery time (trr)**: short, supports high frequency operation

Domain and module applications:

3. Application fields and module examples of FQB46N15-VB MOSFET

1. **DC-DC converter**:
- FQB46N15-VB performs well in DC-DC converters. Its 150V drain-source voltage and low on-resistance make it suitable for power conversion in the medium voltage range. It can provide efficient voltage conversion and is suitable for applications such as computer power supply and communication equipment power supply.

2. **Motor drive**:
- In motor drive applications, FQB46N15-VB can stably control high current loads. Its 45A drain current capability is suitable for power switches in motor controllers, supporting efficient motor drive and control.

3. **Switching power supply**:
- In switching power supply applications, FQB46N15-VB can efficiently perform power switching operations. Its Trench technology provides lower on-resistance and higher switching speed, suitable for power management modules that require efficient switching operations.

4. **Load Switch**:
- In load switch applications, FQB46N15-VB is able to handle medium voltage and current load switches. Its drain current capability of up to 45A and low on-resistance of 35mΩ ensure stable and efficient load switch control.

FQB46N15-VB MOSFET is widely used in power conversion, motor drive and load switching with its medium voltage tolerance, high current capability and low on-resistance, providing high-efficiency and reliable power management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat