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FQB34P10-VB Product details
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1. FQB34P10-VB Product Introduction
FQB34P10-VB is a high-performance single-channel P-type MOSFET in TO263 package. This MOSFET can withstand drain-source voltage (VDS) up to -100V and has a maximum drain current (ID) of -37A. Its gate threshold voltage (Vth) is -2V, ensuring stable conduction even at low gate-source voltage. Manufactured using Trench technology, FQB34P10-VB provides low on-resistance (RDS(ON)), which is 50mΩ at 4.5V gate-source voltage (VGS) and 40mΩ at 10V. The high current and low resistance characteristics of FQB34P10-VB make it suitable for a variety of applications that require efficient switching control, especially in load switches and power management systems.
FQB34P10-VB is a high-performance single-channel P-type MOSFET in TO263 package. This MOSFET can withstand drain-source voltage (VDS) up to -100V and has a maximum drain current (ID) of -37A. Its gate threshold voltage (Vth) is -2V, ensuring stable conduction even at low gate-source voltage. Manufactured using Trench technology, FQB34P10-VB provides low on-resistance (RDS(ON)), which is 50mΩ at 4.5V gate-source voltage (VGS) and 40mΩ at 10V. The high current and low resistance characteristics of FQB34P10-VB make it suitable for a variety of applications that require efficient switching control, especially in load switches and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
2. FQB34P10-VB Detailed parameter description
1. **Package type**: TO263
2. **Polarity configuration**: Single-P-Channel
3. **Drain-source voltage (VDS)**: -100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: -2V
6. **On-resistance (RDS(ON))**:
- 50mΩ @ VGS = 4.5V
- 40mΩ @ VGS = 10V
7. **Drain current (ID)**: -37A
8. **Technology type**: Trench
1. **Package type**: TO263
2. **Polarity configuration**: Single-P-Channel
3. **Drain-source voltage (VDS)**: -100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: -2V
6. **On-resistance (RDS(ON))**:
- 50mΩ @ VGS = 4.5V
- 40mΩ @ VGS = 10V
7. **Drain current (ID)**: -37A
8. **Technology type**: Trench
Domain and module applications：
III. Application fields and module examples of FQB34P10-VB
The high voltage and high current characteristics of FQB34P10-VB MOSFET make it excel in the following fields and modules:
1. **Load switch**: In load switch applications, FQB34P10-VB can be used to control the on/off state of the load, especially in the case of high voltage DC loads, such as load control in power management systems and industrial equipment. Its low on-resistance ensures efficient current switching and reduces power loss.
2. **High voltage power management**: This MOSFET is suitable for high voltage power management systems such as power adapters and power converters. Its high current carrying capacity and low on-resistance help improve power conversion efficiency and stability.
3. **Motor drive control**: In motor drive systems, FQB34P10-VB can be used for P-type MOSFET switch control to handle the reverse current of high voltage motors and control the current flow direction. Its reliable current control and low on-resistance ensure high efficiency of motor drive.
4. **Battery Management System (BMS)**: In battery management systems, the FQB34P10-VB can be used for switch control of high-voltage battery packs, especially in applications that require load switching and protection. Its high current capability and low on-resistance help improve system safety and efficiency.
5. **Power Amplifier Protection**: In power amplifiers and high-voltage power circuits, the FQB34P10-VB can be used as a switching element to protect the circuit from overvoltage and overcurrent. Its low on-resistance and high current handling capability make it very effective in protecting circuits.
The excellent electrical performance and high voltage characteristics of the FQB34P10-VB MOSFET enable it to excel in a variety of applications that require efficient switching and current control.
The high voltage and high current characteristics of FQB34P10-VB MOSFET make it excel in the following fields and modules:
1. **Load switch**: In load switch applications, FQB34P10-VB can be used to control the on/off state of the load, especially in the case of high voltage DC loads, such as load control in power management systems and industrial equipment. Its low on-resistance ensures efficient current switching and reduces power loss.
2. **High voltage power management**: This MOSFET is suitable for high voltage power management systems such as power adapters and power converters. Its high current carrying capacity and low on-resistance help improve power conversion efficiency and stability.
3. **Motor drive control**: In motor drive systems, FQB34P10-VB can be used for P-type MOSFET switch control to handle the reverse current of high voltage motors and control the current flow direction. Its reliable current control and low on-resistance ensure high efficiency of motor drive.
4. **Battery Management System (BMS)**: In battery management systems, the FQB34P10-VB can be used for switch control of high-voltage battery packs, especially in applications that require load switching and protection. Its high current capability and low on-resistance help improve system safety and efficiency.
5. **Power Amplifier Protection**: In power amplifiers and high-voltage power circuits, the FQB34P10-VB can be used as a switching element to protect the circuit from overvoltage and overcurrent. Its low on-resistance and high current handling capability make it very effective in protecting circuits.
The excellent electrical performance and high voltage characteristics of the FQB34P10-VB MOSFET enable it to excel in a variety of applications that require efficient switching and current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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