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FQB34P10TM-VB Product details
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1. FQB34P10TM-VB Product Introduction
**FQB34P10TM-VB** is a high-performance P-channel MOSFET in TO263 package, designed for high current and high voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is -100V, and the gate-source voltage (VGS) range is ±20V. Its threshold voltage (Vth) is -2V, the on-resistance (RDS(ON)) is 50mΩ at 4.5V gate-source voltage, 40mΩ at 10V gate-source voltage, and the drain current (ID) can reach -37A. FQB34P10TM-VB uses Trench technology, which gives MOSFET excellent switching performance and low conduction loss, making it suitable for high-efficiency power management and switching control.
**FQB34P10TM-VB** is a high-performance P-channel MOSFET in TO263 package, designed for high current and high voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is -100V, and the gate-source voltage (VGS) range is ±20V. Its threshold voltage (Vth) is -2V, the on-resistance (RDS(ON)) is 50mΩ at 4.5V gate-source voltage, 40mΩ at 10V gate-source voltage, and the drain current (ID) can reach -37A. FQB34P10TM-VB uses Trench technology, which gives MOSFET excellent switching performance and low conduction loss, making it suitable for high-efficiency power management and switching control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
2. Detailed parameter description of FQB34P10TM-VB
| **Parameter** | **Value** | **Unit** | **Description** |
|----------------------------|------------------------------|--------------|--------------------------------------|
| **Model** | FQB34P10TM-VB | | |
| **Package type** | TO263 | | Compact package, suitable for high-density circuit design|
| **Channel configuration** | Single P-channel| | |
| **Drain-source voltage (VDS)** | -100 | V | Maximum withstand voltage|
| **Gate-source voltage (VGS)** | ±20 | V | Maximum gate-source voltage range|
| **Threshold voltage (Vth)** | -2 | V | Minimum voltage required to turn on|
| **On-resistance (RDS(ON))** | 50 / 40 | mΩ @ VGS=4.5V / VGS=10V | Low on-resistance, reduced conduction loss|
| **Drain current (ID)** | -37 | A | Maximum continuous drain current|
| **Technology** | Trench | | Trench technology, providing higher switching speed and lower on-resistance|
| **Operating junction temperature range (Tj)** | -55 ~ +150 | °C | Wide temperature range, suitable for various environments|
| **Power consumption (Pd)** | 80 | W | High power handling capability|
| **Input capacitance (Ciss)** | 2400 | pF | Low input capacitance, improved switching speed|
| **Reverse recovery time (trr)** | 150 | ns | Fast recovery time, reduced switching loss|
| **Parameter** | **Value** | **Unit** | **Description** |
|----------------------------|------------------------------|--------------|--------------------------------------|
| **Model** | FQB34P10TM-VB | | |
| **Package type** | TO263 | | Compact package, suitable for high-density circuit design|
| **Channel configuration** | Single P-channel| | |
| **Drain-source voltage (VDS)** | -100 | V | Maximum withstand voltage|
| **Gate-source voltage (VGS)** | ±20 | V | Maximum gate-source voltage range|
| **Threshold voltage (Vth)** | -2 | V | Minimum voltage required to turn on|
| **On-resistance (RDS(ON))** | 50 / 40 | mΩ @ VGS=4.5V / VGS=10V | Low on-resistance, reduced conduction loss|
| **Drain current (ID)** | -37 | A | Maximum continuous drain current|
| **Technology** | Trench | | Trench technology, providing higher switching speed and lower on-resistance|
| **Operating junction temperature range (Tj)** | -55 ~ +150 | °C | Wide temperature range, suitable for various environments|
| **Power consumption (Pd)** | 80 | W | High power handling capability|
| **Input capacitance (Ciss)** | 2400 | pF | Low input capacitance, improved switching speed|
| **Reverse recovery time (trr)** | 150 | ns | Fast recovery time, reduced switching loss|
Domain and module applications：
### 3. Application fields and module examples
**FQB34P10TM-VB**'s high current and low on-resistance characteristics make it have important application value in many fields. The following are the main application fields and module examples of this product:
#### 1. **Power management**
In power management systems, FQB34P10TM-VB can effectively handle high current and high voltage, thereby improving power conversion efficiency. Especially in high-efficiency DC-DC converters, this MOSFET can provide stable switching performance, reduce power loss of the power supply, and ensure efficient operation of the system.
#### 2. **Power switch**
In power switch applications, FQB34P10TM-VB's low on-resistance and high current capability make it an ideal choice. It can handle larger load currents, such as motor control and high-power switch modules, ensuring reliable operation of the system under high load conditions.
#### 3. **Motor drive control**
In motor drive control systems, FQB34P10TM-VB provides powerful power switching capabilities for a variety of motor drive applications, including stepper motor and servo motor controllers. Its excellent switching performance and low on-resistance can effectively control the start, run and stop of the motor, improving the efficiency and performance of the system.
#### 4. **Automotive electronics**
In the field of automotive electronics, FQB34P10TM-VB can be used in battery management systems, power control modules and other automotive electronic devices. Its high current and high voltage handling capabilities can effectively manage the battery charging and discharging process and control the various power requirements of the vehicle, improving the overall performance and reliability of the vehicle.
#### 5. **LED drive**
FQB34P10TM-VB performs well in high-power LED drive applications. Its low on-resistance and high current handling capability make it suitable for LED driver modules in commercial lighting, architectural lighting and automotive lighting systems, ensuring efficient driving and stable operation of LEDs.
**Summary**, FQB34P10TM-VB provides reliable solutions in power management, power switching, motor drive, automotive electronics and LED drive with its high current and low on-resistance characteristics. Its Trench technology ensures high switching speed and low conduction loss, suitable for a variety of high-efficiency application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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