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FQB33N10L-VB Product details
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Product Introduction
FQB33N10L-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for low voltage and high current applications. It uses Trench technology, has a drain-source breakdown voltage of 100V and excellent low on-resistance characteristics. This MOSFET is suitable for high-efficiency switching applications, provides excellent conduction performance and low switching losses, and is particularly suitable for use in application environments that require fast switching and high current handling.
FQB33N10L-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for low voltage and high current applications. It uses Trench technology, has a drain-source breakdown voltage of 100V and excellent low on-resistance characteristics. This MOSFET is suitable for high-efficiency switching applications, provides excellent conduction performance and low switching losses, and is particularly suitable for use in application environments that require fast switching and high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Maximum drain current (ID)**: 45A
- **Technology type**: Trench
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Maximum drain current (ID)**: 45A
- **Technology type**: Trench
Domain and module applications：
Applications and module examples
1. **Switching Power Supply (SMPS)**: The FQB33N10L-VB is ideal for use in switching power supply systems, such as AC-DC converters and DC-DC converters. Its low on-resistance and high current handling capability help improve conversion efficiency, reduce energy losses, and ensure high performance and stability.
2. **Motor Driver**: In motor drive systems, this MOSFET is able to provide high current and low on-resistance, which is suitable for efficient control and drive of motors, especially in application scenarios that require fast switching and high performance.
3. **Power Management Circuit**: The FQB33N10L-VB is also suitable for power management circuits, such as battery-powered devices and power modules. Its excellent switching performance and low on-resistance can optimize power management, extend battery life, and improve the overall efficiency of the system.
4. **Power Regulator**: This MOSFET can be used in a variety of power regulator applications, including voltage regulators and current regulators. Its fast switching capability and low on-resistance ensure accurate power regulation and stable output performance.
FQB33N10L-VB is widely used in switching power supplies, motor drivers, power management circuits and power regulators, which require high current and low on-resistance, due to its efficient switching performance, low on-resistance and excellent current handling capability.
1. **Switching Power Supply (SMPS)**: The FQB33N10L-VB is ideal for use in switching power supply systems, such as AC-DC converters and DC-DC converters. Its low on-resistance and high current handling capability help improve conversion efficiency, reduce energy losses, and ensure high performance and stability.
2. **Motor Driver**: In motor drive systems, this MOSFET is able to provide high current and low on-resistance, which is suitable for efficient control and drive of motors, especially in application scenarios that require fast switching and high performance.
3. **Power Management Circuit**: The FQB33N10L-VB is also suitable for power management circuits, such as battery-powered devices and power modules. Its excellent switching performance and low on-resistance can optimize power management, extend battery life, and improve the overall efficiency of the system.
4. **Power Regulator**: This MOSFET can be used in a variety of power regulator applications, including voltage regulators and current regulators. Its fast switching capability and low on-resistance ensure accurate power regulation and stable output performance.
FQB33N10L-VB is widely used in switching power supplies, motor drivers, power management circuits and power regulators, which require high current and low on-resistance, due to its efficient switching performance, low on-resistance and excellent current handling capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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