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FQB32N20C-VB Product details
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Product Introduction
FQB30N06LTM-VB is a high-performance single N-channel power MOSFET in TO263 package, designed for high current and high efficiency applications. The MOSFET has a drain-source voltage (VDS) of 60V, supports a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. Its on-resistance (RDS(ON)) is 35mΩ at a gate-source voltage of 4.5V, 32mΩ at a gate-source voltage of 10V, and the maximum drain current (ID) is 50A. FQB30N06LTM-VB uses Trench technology, which improves the switching efficiency of the device and reduces the on-resistance, making it excel in high current and high-efficiency power management applications.
FQB30N06LTM-VB is a high-performance single N-channel power MOSFET in TO263 package, designed for high current and high efficiency applications. The MOSFET has a drain-source voltage (VDS) of 60V, supports a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. Its on-resistance (RDS(ON)) is 35mΩ at a gate-source voltage of 4.5V, 32mΩ at a gate-source voltage of 10V, and the maximum drain current (ID) is 50A. FQB30N06LTM-VB uses Trench technology, which improves the switching efficiency of the device and reduces the on-resistance, making it excel in high current and high-efficiency power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology type**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
The high current capability and low on-resistance of FQB30N06LTM-VB make it widely used in the following fields and modules:
1. **Power management**: This MOSFET is suitable for high-efficiency power management systems, including switch mode power supplies (SMPS) and DC-DC converters. Its low on-resistance and high current handling capability can effectively reduce energy loss and improve the overall efficiency of the system.
2. **Motor drive**: In motor drive applications, FQB30N06LTM-VB can efficiently control DC motors and stepper motors, support high current loads, optimize the performance and response speed of motors, and is widely used in industrial automation and power tools.
3. **Power switch**: Due to its ability to withstand higher currents and low on-resistance, FQB30N06LTM-VB is suitable for high-power switching applications such as power control and load switching, ensuring efficient and stable operation of the system.
4. **Inverters and power converters**: In inverters (such as solar inverters) and other power converters, the high current and low on-resistance characteristics of this MOSFET help improve energy conversion efficiency and are suitable for scenarios that require high current handling.
5. **Uninterruptible power supply (UPS)**: FQB30N06LTM-VB can provide stable power conversion in UPS systems, support high current loads, and ensure smooth power supply when power is interrupted. It is suitable for power backup systems that require high reliability.
The excellent performance of FQB30N06LTM-VB makes it an ideal choice for various power management, motor drive and high power switching applications.
The high current capability and low on-resistance of FQB30N06LTM-VB make it widely used in the following fields and modules:
1. **Power management**: This MOSFET is suitable for high-efficiency power management systems, including switch mode power supplies (SMPS) and DC-DC converters. Its low on-resistance and high current handling capability can effectively reduce energy loss and improve the overall efficiency of the system.
2. **Motor drive**: In motor drive applications, FQB30N06LTM-VB can efficiently control DC motors and stepper motors, support high current loads, optimize the performance and response speed of motors, and is widely used in industrial automation and power tools.
3. **Power switch**: Due to its ability to withstand higher currents and low on-resistance, FQB30N06LTM-VB is suitable for high-power switching applications such as power control and load switching, ensuring efficient and stable operation of the system.
4. **Inverters and power converters**: In inverters (such as solar inverters) and other power converters, the high current and low on-resistance characteristics of this MOSFET help improve energy conversion efficiency and are suitable for scenarios that require high current handling.
5. **Uninterruptible power supply (UPS)**: FQB30N06LTM-VB can provide stable power conversion in UPS systems, support high current loads, and ensure smooth power supply when power is interrupted. It is suitable for power backup systems that require high reliability.
The excellent performance of FQB30N06LTM-VB makes it an ideal choice for various power management, motor drive and high power switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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