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FQB25N33TM_F085-VB Product details
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1. FQB25N33TM_F085-VB Product Introduction
FQB25N33TM_F085-VB is a high voltage N-channel MOSFET in TO263 package, designed for high voltage applications. Its drain-source voltage (VDS) is 500V, which can handle higher voltages and is suitable for switching operations in high voltage environments. The on-resistance (RDS(ON)) of this MOSFET is 240mΩ@VGS=10V, providing moderate conduction performance and power consumption management. The drain current (ID) is 18A, which can handle medium current loads. FQB25N33TM_F085-VB adopts SJ_Multi-EPI (super junction multi-epitaxial) technology to optimize switching performance and thermal stability, making it stable and efficient in high voltage applications.
FQB25N33TM_F085-VB is a high voltage N-channel MOSFET in TO263 package, designed for high voltage applications. Its drain-source voltage (VDS) is 500V, which can handle higher voltages and is suitable for switching operations in high voltage environments. The on-resistance (RDS(ON)) of this MOSFET is 240mΩ@VGS=10V, providing moderate conduction performance and power consumption management. The drain current (ID) is 18A, which can handle medium current loads. FQB25N33TM_F085-VB adopts SJ_Multi-EPI (super junction multi-epitaxial) technology to optimize switching performance and thermal stability, making it stable and efficient in high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 18A | 240mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 18A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 18A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. FQB25N33TM_F085-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 240mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi) technology
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 240mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi) technology
Domain and module applications：
3. Application fields and module examples of FQB25N33TM_F085-VB
**1. High voltage power converters**
FQB25N33TM_F085-VB is suitable for high voltage power converters, such as high voltage DC-DC converters. Its 500V withstand voltage capability enables it to handle high voltage inputs, and the design of on-resistance helps maintain good power conversion efficiency under high voltage conditions. This makes it a key component in power electronic equipment, industrial power systems, and grid management.
**2. Industrial control systems**
In industrial control systems, FQB25N33TM_F085-VB is able to stably control high voltage loads. Its high voltage and moderate on-resistance make it an ideal choice for driving high voltage motors and other high current devices, and is suitable for use in inverters, drives, and control modules for efficient control and high reliability.
**3. Inverter applications**
This MOSFET also performs well in inverters, especially in high voltage inverters. Its high voltage capability and excellent switching performance make it suitable for use as a power switch in solar inverters, wind inverters and other renewable energy systems, ensuring high efficiency and long-term stability of the system.
**4. Power management system**
FQB25N33TM_F085-VB is suitable for various power management systems, especially those that need to handle high voltage and medium current. It can be used as a switching element in power management modules, such as UPS systems, power conditioning modules and power distribution systems, effectively improving the overall efficiency and reliability of the system.
**1. High voltage power converters**
FQB25N33TM_F085-VB is suitable for high voltage power converters, such as high voltage DC-DC converters. Its 500V withstand voltage capability enables it to handle high voltage inputs, and the design of on-resistance helps maintain good power conversion efficiency under high voltage conditions. This makes it a key component in power electronic equipment, industrial power systems, and grid management.
**2. Industrial control systems**
In industrial control systems, FQB25N33TM_F085-VB is able to stably control high voltage loads. Its high voltage and moderate on-resistance make it an ideal choice for driving high voltage motors and other high current devices, and is suitable for use in inverters, drives, and control modules for efficient control and high reliability.
**3. Inverter applications**
This MOSFET also performs well in inverters, especially in high voltage inverters. Its high voltage capability and excellent switching performance make it suitable for use as a power switch in solar inverters, wind inverters and other renewable energy systems, ensuring high efficiency and long-term stability of the system.
**4. Power management system**
FQB25N33TM_F085-VB is suitable for various power management systems, especially those that need to handle high voltage and medium current. It can be used as a switching element in power management modules, such as UPS systems, power conditioning modules and power distribution systems, effectively improving the overall efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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