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FQB22P10-VB Product details
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FQB22P10-VB MOSFET Product Introduction
FQB22P10-VB is a high-performance P-channel MOSFET in TO263 package, designed for low voltage and high current applications. This MOSFET can withstand drain-source voltage (VDS) up to -100V and supports gate-source voltage (VGS) of ±20V, making it suitable for use in high voltage environments. Its threshold voltage is -2V, the on-resistance is 50mΩ at a gate drive voltage of 4.5V and 40mΩ at 10V, and the maximum drain current is -37A. FQB22P10-VB uses Trench technology, which improves switching efficiency and performance, making it excel in various power management and switching applications.
FQB22P10-VB is a high-performance P-channel MOSFET in TO263 package, designed for low voltage and high current applications. This MOSFET can withstand drain-source voltage (VDS) up to -100V and supports gate-source voltage (VGS) of ±20V, making it suitable for use in high voltage environments. Its threshold voltage is -2V, the on-resistance is 50mΩ at a gate drive voltage of 4.5V and 40mΩ at 10V, and the maximum drain current is -37A. FQB22P10-VB uses Trench technology, which improves switching efficiency and performance, making it excel in various power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
FQB22P10-VB MOSFET Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**: 50mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS=10V
- **Drain current (ID)**: -37A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**: 50mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS=10V
- **Drain current (ID)**: -37A
- **Technology**: Trench
Domain and module applications：
Applications and modules
FQB22P10-VB MOSFET has a wide range of applications in multiple high voltage and high current applications:
- **Power switch**: In power switching applications, such as DC-DC converters and switching power supplies, FQB22P10-VB can effectively control the current flow and improve power efficiency and stability due to its low on-resistance and high current handling capability.
- **Load switch**: This MOSFET is ideal for load switching applications, such as load switching in switching power supplies. Its high current handling capability and low on-resistance ensure reliable switching function under high load conditions.
- **Battery management system**: In battery management systems, FQB22P10-VB can be used to control the charging and discharging process of the battery. Its high current handling capability and low on-resistance help improve the efficiency of the system and the battery life.
- **LED Driver**: FQB22P10-VB is suitable for LED driver circuits as a switching element to control the switching of LEDs. Due to its high switching speed and low on-resistance, efficient LED driving and brightness control can be achieved.
- **Automotive Electronics**: In automotive electronic systems, such as motor control and power management systems, FQB22P10-VB can be used for high current switching applications, providing stable and reliable current control to meet the high requirements of automotive electronics.
The high voltage and high current handling capabilities of FQB22P10-VB make it excellent in various high voltage and high current switching and power management applications.
FQB22P10-VB MOSFET has a wide range of applications in multiple high voltage and high current applications:
- **Power switch**: In power switching applications, such as DC-DC converters and switching power supplies, FQB22P10-VB can effectively control the current flow and improve power efficiency and stability due to its low on-resistance and high current handling capability.
- **Load switch**: This MOSFET is ideal for load switching applications, such as load switching in switching power supplies. Its high current handling capability and low on-resistance ensure reliable switching function under high load conditions.
- **Battery management system**: In battery management systems, FQB22P10-VB can be used to control the charging and discharging process of the battery. Its high current handling capability and low on-resistance help improve the efficiency of the system and the battery life.
- **LED Driver**: FQB22P10-VB is suitable for LED driver circuits as a switching element to control the switching of LEDs. Due to its high switching speed and low on-resistance, efficient LED driving and brightness control can be achieved.
- **Automotive Electronics**: In automotive electronic systems, such as motor control and power management systems, FQB22P10-VB can be used for high current switching applications, providing stable and reliable current control to meet the high requirements of automotive electronics.
The high voltage and high current handling capabilities of FQB22P10-VB make it excellent in various high voltage and high current switching and power management applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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