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FQB22P10TM_F085-VB Product details
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1. FQB22P10TM_F085-VB MOSFET Product Introduction
FQB22P10TM_F085-VB is a high-efficiency single P-channel MOSFET in a TO263 package, designed for medium voltage and high current applications. Its maximum drain-source voltage (VDS) is -100V, making it suitable for applications requiring negative voltage control. The gate-source voltage (VGS) range of this MOSFET is ±20V, providing flexible control options. The threshold voltage (Vth) is -2V, ensuring that it can be turned on at a lower gate voltage. The on-resistance (RDS(ON)) of FQB22P10TM_F085-VB is 50mΩ at VGS of 4.5V and 40mΩ at VGS of 10V, capable of supporting a drain current of up to -37A. Based on Trench technology, the device performs well in switching operations, has low conduction losses and excellent thermal performance, and is widely used in various power switching and power management applications.
FQB22P10TM_F085-VB is a high-efficiency single P-channel MOSFET in a TO263 package, designed for medium voltage and high current applications. Its maximum drain-source voltage (VDS) is -100V, making it suitable for applications requiring negative voltage control. The gate-source voltage (VGS) range of this MOSFET is ±20V, providing flexible control options. The threshold voltage (Vth) is -2V, ensuring that it can be turned on at a lower gate voltage. The on-resistance (RDS(ON)) of FQB22P10TM_F085-VB is 50mΩ at VGS of 4.5V and 40mΩ at VGS of 10V, capable of supporting a drain current of up to -37A. Based on Trench technology, the device performs well in switching operations, has low conduction losses and excellent thermal performance, and is widely used in various power switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
II. Detailed parameter description of FQB22P10TM_F085-VB MOSFET
1. **Package**: TO263
2. **Configuration**: Single P-channel
3. **Drain-source voltage (VDS)**: -100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: -2V
6. **On-resistance (RDS(ON))**:
- 50mΩ @ VGS=4.5V
- 40mΩ @ VGS=10V
7. **Drain current (ID)**: -37A
8. **Technology**: Trench technology
9. **Maximum junction temperature (Tj)**: Up to 150°C
10. **Input capacitance (Ciss)**: Medium, suitable for high frequency switching applications
11. **Switching speed**: Fast, suitable for high frequency switching
12. **Drain-source diode reverse recovery time (trr)**: Short, supports high frequency operation
1. **Package**: TO263
2. **Configuration**: Single P-channel
3. **Drain-source voltage (VDS)**: -100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: -2V
6. **On-resistance (RDS(ON))**:
- 50mΩ @ VGS=4.5V
- 40mΩ @ VGS=10V
7. **Drain current (ID)**: -37A
8. **Technology**: Trench technology
9. **Maximum junction temperature (Tj)**: Up to 150°C
10. **Input capacitance (Ciss)**: Medium, suitable for high frequency switching applications
11. **Switching speed**: Fast, suitable for high frequency switching
12. **Drain-source diode reverse recovery time (trr)**: Short, supports high frequency operation
Domain and module applications：
3. FQB22P10TM_F085-VB MOSFET application areas and module examples
1. **Power management system**:
- FQB22P10TM_F085-VB performs well in power management systems, especially in negative voltage applications. Its 100V drain-source voltage and 40mΩ low on-resistance make it very suitable for use in switching power supplies (SMPS) and DC-DC converters, providing efficient power conversion and management.
2. **Load switch**:
- In load switch applications, FQB22P10TM_F085-VB is able to handle high currents and provide stable switching performance. Its drain current capability of up to -37A makes it suitable for applications such as motor control and LED drivers that require high current loads.
3. **Reverse voltage protection**:
- FQB22P10TM_F085-VB can be used for reverse voltage protection in circuits. Its negative voltage capability and low on-resistance enable it to provide reliable performance in handling unexpected reverse voltage or overvoltage protection, effectively protecting other components in the circuit.
4. **High-efficiency power conversion**:
- In high-efficiency power converters, such as inverters or power adapters, FQB22P10TM_F085-VB is able to provide stable switching operation and low-power operation. Its Trench technology and low RDS(ON) characteristics ensure high efficiency and lower power loss, suitable for various high-efficiency power modules.
FQB22P10TM_F085-VB MOSFET is widely used in negative voltage switching, power management and high-efficiency power conversion due to its high current capability, low on-resistance and excellent thermal stability, ensuring reliable operation of various high-current loads.
1. **Power management system**:
- FQB22P10TM_F085-VB performs well in power management systems, especially in negative voltage applications. Its 100V drain-source voltage and 40mΩ low on-resistance make it very suitable for use in switching power supplies (SMPS) and DC-DC converters, providing efficient power conversion and management.
2. **Load switch**:
- In load switch applications, FQB22P10TM_F085-VB is able to handle high currents and provide stable switching performance. Its drain current capability of up to -37A makes it suitable for applications such as motor control and LED drivers that require high current loads.
3. **Reverse voltage protection**:
- FQB22P10TM_F085-VB can be used for reverse voltage protection in circuits. Its negative voltage capability and low on-resistance enable it to provide reliable performance in handling unexpected reverse voltage or overvoltage protection, effectively protecting other components in the circuit.
4. **High-efficiency power conversion**:
- In high-efficiency power converters, such as inverters or power adapters, FQB22P10TM_F085-VB is able to provide stable switching operation and low-power operation. Its Trench technology and low RDS(ON) characteristics ensure high efficiency and lower power loss, suitable for various high-efficiency power modules.
FQB22P10TM_F085-VB MOSFET is widely used in negative voltage switching, power management and high-efficiency power conversion due to its high current capability, low on-resistance and excellent thermal stability, ensuring reliable operation of various high-current loads.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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