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FQB19N20-VB Product details
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1. FQB19N20-VB Product Introduction
FQB19N20-VB is a high voltage single channel N-type MOSFET in TO263 package. This MOSFET is designed for high voltage applications and can withstand drain-source voltage (VDS) up to 200V and has a maximum drain current (ID) of 40A. Manufactured using Trench technology, FQB19N20-VB provides a low on-resistance (RDS(ON)) of 48mΩ at a gate-source voltage (VGS) of 10V. Its gate threshold voltage (Vth) is 3V, ensuring stable conduction even at lower gate-source voltages. FQB19N20-VB is a high-performance, high-efficiency MOSFET suitable for a variety of applications requiring high voltage and high current.
FQB19N20-VB is a high voltage single channel N-type MOSFET in TO263 package. This MOSFET is designed for high voltage applications and can withstand drain-source voltage (VDS) up to 200V and has a maximum drain current (ID) of 40A. Manufactured using Trench technology, FQB19N20-VB provides a low on-resistance (RDS(ON)) of 48mΩ at a gate-source voltage (VGS) of 10V. Its gate threshold voltage (Vth) is 3V, ensuring stable conduction even at lower gate-source voltages. FQB19N20-VB is a high-performance, high-efficiency MOSFET suitable for a variety of applications requiring high voltage and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. FQB19N20-VB Detailed parameter description
1. **Package type**: TO263
2. **Polarity configuration**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 200V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**: 48mΩ @ VGS = 10V
7. **Drain current (ID)**: 40A
8. **Technology type**: Trench
1. **Package type**: TO263
2. **Polarity configuration**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 200V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**: 48mΩ @ VGS = 10V
7. **Drain current (ID)**: 40A
8. **Technology type**: Trench
Domain and module applications：
3. Examples of applicable fields and modules of FQB19N20-VB
FQB19N20-VB MOSFET is suitable for multiple fields and modules with its high voltage and high current characteristics:
1. **High voltage switching power supply (SMPS)**: In high voltage switching power supply system, FQB19N20-VB as a switching element can effectively handle 200V high voltage input, ensure efficient power conversion and stable power output, and is suitable for power adapters and industrial power modules.
2. **Motor drive system**: The high current handling capability of this MOSFET makes it suitable for motor control applications, especially in motor systems that require high voltage drive, such as industrial power tools and automotive motor control, to provide stable current management and high-efficiency operation.
3. **Battery Management System (BMS)**: In the battery management system, FQB19N20-VB can be used to manage high-voltage battery packs, suitable for electric vehicles and energy storage systems, providing reliable current control and overvoltage protection for batteries, and improving the safety and reliability of the system.
4. **High-voltage load switch**: In high-voltage load switch applications, FQB19N20-VB can effectively control high-voltage loads, suitable for power distribution systems and load management modules, ensuring the safety and efficiency of high-voltage switch operations.
5. **High-voltage communication power supply**: In the power module of communication equipment, FQB19N20-VB can handle high-voltage power input, ensure the stability and efficient operation of communication equipment, and is suitable for data communication equipment and wireless base stations.
The high voltage and high current characteristics of FQB19N20-VB MOSFET make it an ideal choice for handling high-voltage power and load control, and are widely used in power management, motor control and high-voltage switching fields.
FQB19N20-VB MOSFET is suitable for multiple fields and modules with its high voltage and high current characteristics:
1. **High voltage switching power supply (SMPS)**: In high voltage switching power supply system, FQB19N20-VB as a switching element can effectively handle 200V high voltage input, ensure efficient power conversion and stable power output, and is suitable for power adapters and industrial power modules.
2. **Motor drive system**: The high current handling capability of this MOSFET makes it suitable for motor control applications, especially in motor systems that require high voltage drive, such as industrial power tools and automotive motor control, to provide stable current management and high-efficiency operation.
3. **Battery Management System (BMS)**: In the battery management system, FQB19N20-VB can be used to manage high-voltage battery packs, suitable for electric vehicles and energy storage systems, providing reliable current control and overvoltage protection for batteries, and improving the safety and reliability of the system.
4. **High-voltage load switch**: In high-voltage load switch applications, FQB19N20-VB can effectively control high-voltage loads, suitable for power distribution systems and load management modules, ensuring the safety and efficiency of high-voltage switch operations.
5. **High-voltage communication power supply**: In the power module of communication equipment, FQB19N20-VB can handle high-voltage power input, ensure the stability and efficient operation of communication equipment, and is suitable for data communication equipment and wireless base stations.
The high voltage and high current characteristics of FQB19N20-VB MOSFET make it an ideal choice for handling high-voltage power and load control, and are widely used in power management, motor control and high-voltage switching fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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