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FQB19N20LTM-VB Product details

Product introduction:

1. FQB19N20LTM-VB Product Introduction

FQB19N20LTM-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and medium voltage applications. This MOSFET provides a maximum drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V, suitable for switching applications under medium voltage conditions. The FQB19N20LTM-VB has a turn-on voltage (Vth) of 3V, an on-resistance (RDS(ON)) of 48mΩ (@VGS=10V), and a maximum drain current (ID) of 40A. It uses Trench technology, has low on-resistance and high switching efficiency, and is very suitable for high current and high efficiency power electronic systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 200V 3V 40A 48mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 200V 3V 40A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 200V 3V 40A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
2. FQB19N20LTM-VB Detailed parameter description

- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology type**: Trench technology
- **Power consumption**: Optimized for low conduction loss and high switching efficiency
- **Package size**: TO263 package provides good heat dissipation and moderate size, suitable for high current applications
- **Operating temperature range**: Suitable for industrial and commercial electronic environments

Domain and module applications:

3. Application fields and module examples of FQB19N20LTM-VB

The high current capability and medium voltage tolerance of FQB19N20LTM-VB MOSFET make it excel in multiple fields and modules, including:

1. **Power management**: In power management systems such as DC-DC converters and high-efficiency power modules, the low on-resistance and high current capability of FQB19N20LTM-VB ensure efficient power conversion and low power loss. This makes it suitable for current switching and regulation applications in laptops, power adapters, and industrial power modules.

2. **Power tools**: In power tools and household appliances, FQB19N20LTM-VB can be used to drive motors and control high current loads. Its high current handling capability and good switching performance make it suitable for motor drive circuits in power tools, ensuring reliable operation and long life.

3. **Automotive electronics**: In automotive electronic systems, such as battery management systems and motor control units, the medium voltage capability and high current capability of the FQB19N20LTM-VB enable it to effectively control current flow, improving the overall efficiency and reliability of the system. It is suitable for power control modules in electric and hybrid vehicles.

4. **Industrial automation**: The FQB19N20LTM-VB is also suitable for industrial automation equipment, such as relay drive and switch control. In these applications, the high current capability and low on-resistance of the MOSFET help achieve efficient signal switching and control, improving the performance and response speed of automation equipment.

These application scenarios demonstrate the superior performance and wide applicability of the FQB19N20LTM-VB MOSFET in multiple high current and medium voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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