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FQB14N30TM-VB Product details
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Product Introduction
FQB14N30TM-VB is a high voltage single N-channel MOSFET in TO263 package, suitable for medium and high voltage and high current applications. The device uses SJ_Multi-EPI technology, has a drain-source breakdown voltage of 500V and a low on-resistance of 240mΩ, and can provide stable switching performance in a higher voltage environment. Its design goal is to provide a reliable solution for high voltage power supply and high current applications, especially suitable for power management and industrial control systems.
FQB14N30TM-VB is a high voltage single N-channel MOSFET in TO263 package, suitable for medium and high voltage and high current applications. The device uses SJ_Multi-EPI technology, has a drain-source breakdown voltage of 500V and a low on-resistance of 240mΩ, and can provide stable switching performance in a higher voltage environment. Its design goal is to provide a reliable solution for high voltage power supply and high current applications, especially suitable for power management and industrial control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 18A | 240mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 18A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 18A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 240mΩ @ VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 240mΩ @ VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
1. **Medium and high voltage power converters**: The FQB14N30TM-VB is suitable for medium and high voltage power converters, such as high voltage DC-DC converters and AC-DC power modules. Its 500V withstand voltage capability and good switching performance enable it to efficiently handle high voltages and high currents in power conversion.
2. **Switching Power Supply (SMPS)**: In switching power supplies, the low on-resistance and high withstand voltage characteristics of the FQB14N30TM-VB help improve the energy efficiency of the overall system, especially in applications that need to handle high voltages, such as industrial power supplies and power modules.
3. **Motor drive control**: This MOSFET can be used in high voltage motor drive control systems, providing stable switching capabilities and good conduction performance, suitable for efficient control and drive of industrial motors.
4. **Power Inverter**: FQB14N30TM-VB is suitable for power inverter systems, such as photovoltaic inverters and wind power inverters. Its high withstand voltage and excellent switching performance ensure stability and reliability in inverter systems, supporting high voltage input and power conversion.
With its high withstand voltage, low on-resistance and good current handling capability, FQB14N30TM-VB performs well in applications such as medium and high voltage power converters, switching power supplies, motor drives and power inverters, and is suitable for various occasions that need to handle high voltage and high current.
1. **Medium and high voltage power converters**: The FQB14N30TM-VB is suitable for medium and high voltage power converters, such as high voltage DC-DC converters and AC-DC power modules. Its 500V withstand voltage capability and good switching performance enable it to efficiently handle high voltages and high currents in power conversion.
2. **Switching Power Supply (SMPS)**: In switching power supplies, the low on-resistance and high withstand voltage characteristics of the FQB14N30TM-VB help improve the energy efficiency of the overall system, especially in applications that need to handle high voltages, such as industrial power supplies and power modules.
3. **Motor drive control**: This MOSFET can be used in high voltage motor drive control systems, providing stable switching capabilities and good conduction performance, suitable for efficient control and drive of industrial motors.
4. **Power Inverter**: FQB14N30TM-VB is suitable for power inverter systems, such as photovoltaic inverters and wind power inverters. Its high withstand voltage and excellent switching performance ensure stability and reliability in inverter systems, supporting high voltage input and power conversion.
With its high withstand voltage, low on-resistance and good current handling capability, FQB14N30TM-VB performs well in applications such as medium and high voltage power converters, switching power supplies, motor drives and power inverters, and is suitable for various occasions that need to handle high voltage and high current.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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