Featured Model

Last updated:

FQB12P20-VB Product details

Product introduction:

1. FQB12P20-VB Product Introduction

FQB12P20-VB is a high-voltage P-channel power MOSFET in TO263 package, designed for applications requiring negative voltage and high current. The drain-source voltage (VDS) of this MOSFET is -200V, which is suitable for switching operations in negative voltage environments. Its on-resistance (RDS(ON)) is 600mΩ@VGS=4.5V and 500mΩ@VGS=10V, providing good conduction performance and low power consumption characteristics. The drain current (ID) is -11A, capable of handling medium current loads. FQB12P20-VB uses Trench technology to optimize switching performance and thermal stability, making it an ideal choice for high-voltage load switches and power management systems.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-P -200V -3.5V -11A 500mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-P -200V -3.5V -11A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-P -200V -3.5V -11A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-P
2. FQB12P20-VB Detailed parameter description

- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3.5V
- **On-resistance (RDS(ON))**:
- 600mΩ @ VGS=4.5V
- 500mΩ @ VGS=10V
- **Drain current (ID)**: -11A
- **Technology**: Trench technology

Domain and module applications:

3. Application fields and module examples of FQB12P20-VB

**1. High-voltage power management **
FQB12P20-VB is very suitable for high-voltage power management systems, especially power switch applications in negative voltage environments. Its high voltage capability and low on-resistance make it a key switching element in high-voltage power circuits, such as effectively controlling negative voltage loads in high-voltage DC-DC converters.

**2. Motor drive circuit **
In motor drive circuits, the high current handling capability and low on-resistance of FQB12P20-VB make it very suitable for use as a switch control for motors. Especially in motor drivers that require high voltage, such as DC motor control systems and stepper motor drive modules, it can provide stable performance.

**3. Inverter **
This MOSFET performs well in inverters, especially in inverter applications that handle negative voltage environments. Its high drain-source voltage capability and good switching performance make it suitable for the power switch part of solar inverters and other high voltage inverter systems, providing high efficiency and stable operation.

**4. High-voltage switch mode power supply (SMPS) **
FQB12P20-VB is suitable for high-voltage switch mode power supplies. As a negative voltage switching element, it can effectively handle the switching operation in high voltage power supplies. Especially in high-power switch mode power supplies and power modules, it can provide high-efficiency and low-power solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat