FQB12P20-VB Product details
Product introduction:
FQB12P20-VB is a high-voltage P-channel power MOSFET in TO263 package, designed for applications requiring negative voltage and high current. The drain-source voltage (VDS) of this MOSFET is -200V, which is suitable for switching operations in negative voltage environments. Its on-resistance (RDS(ON)) is 600mΩ@VGS=4.5V and 500mΩ@VGS=10V, providing good conduction performance and low power consumption characteristics. The drain current (ID) is -11A, capable of handling medium current loads. FQB12P20-VB uses Trench technology to optimize switching performance and thermal stability, making it an ideal choice for high-voltage load switches and power management systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | 500mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3.5V
- **On-resistance (RDS(ON))**:
- 600mΩ @ VGS=4.5V
- 500mΩ @ VGS=10V
- **Drain current (ID)**: -11A
- **Technology**: Trench technology
Domain and module applications:
**1. High-voltage power management **
FQB12P20-VB is very suitable for high-voltage power management systems, especially power switch applications in negative voltage environments. Its high voltage capability and low on-resistance make it a key switching element in high-voltage power circuits, such as effectively controlling negative voltage loads in high-voltage DC-DC converters.
**2. Motor drive circuit **
In motor drive circuits, the high current handling capability and low on-resistance of FQB12P20-VB make it very suitable for use as a switch control for motors. Especially in motor drivers that require high voltage, such as DC motor control systems and stepper motor drive modules, it can provide stable performance.
**3. Inverter **
This MOSFET performs well in inverters, especially in inverter applications that handle negative voltage environments. Its high drain-source voltage capability and good switching performance make it suitable for the power switch part of solar inverters and other high voltage inverter systems, providing high efficiency and stable operation.
**4. High-voltage switch mode power supply (SMPS) **
FQB12P20-VB is suitable for high-voltage switch mode power supplies. As a negative voltage switching element, it can effectively handle the switching operation in high voltage power supplies. Especially in high-power switch mode power supplies and power modules, it can provide high-efficiency and low-power solutions.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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