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FQB11P06-VB Product details
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FQB11P06-VB MOSFET Product Introduction
FQB11P06-VB is a high-performance P-channel MOSFET in TO263 package, designed for low voltage and high current applications. This MOSFET can withstand drain-source voltage (VDS) up to -60V and supports gate-source voltage (VGS) of ±20V, suitable for use in low voltage environments. Its threshold voltage is -1.7V, the on-resistance is 77mΩ at a gate drive voltage of 4.5V and 64mΩ at 10V, and the maximum drain current is -30A. FQB11P06-VB uses Trench technology, which improves switching speed and efficiency, making it excel in various power management and switching applications.
FQB11P06-VB is a high-performance P-channel MOSFET in TO263 package, designed for low voltage and high current applications. This MOSFET can withstand drain-source voltage (VDS) up to -60V and supports gate-source voltage (VGS) of ±20V, suitable for use in low voltage environments. Its threshold voltage is -1.7V, the on-resistance is 77mΩ at a gate drive voltage of 4.5V and 64mΩ at 10V, and the maximum drain current is -30A. FQB11P06-VB uses Trench technology, which improves switching speed and efficiency, making it excel in various power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | 64mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
FQB11P06-VB MOSFET Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**: 77mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 64mΩ @ VGS=10V
- **Drain current (ID)**: -30A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**: 77mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 64mΩ @ VGS=10V
- **Drain current (ID)**: -30A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
The FQB11P06-VB MOSFET has a wide range of applications in multiple low voltage, high current applications:
- **Power Management**: In power management applications such as DC-DC converters and power switches, the FQB11P06-VB can effectively control the current flow and improve power efficiency and stability due to its low on-resistance and high current handling capability.
- **Load Switch**: This MOSFET is suitable for load switching applications such as load switching in switching power supplies. Its high current handling capability and low on-resistance enable it to provide reliable switching function under high load conditions.
- **Battery Management System**: The FQB11P06-VB is also suitable for battery management systems to control the charging and discharging process of the battery. Its high current handling capability and low on-resistance help improve the efficiency of the system and the battery life.
- **LED Driver**: In LED driver circuits, this MOSFET can be used as a switching element to control the switching of LEDs. Due to its high switching speed and low on-resistance, efficient LED driving and brightness control can be achieved.
- **Automotive Electronics**: In automotive electronic systems, such as motor control and power management systems, FQB11P06-VB can be used in high current switching applications, providing stable and reliable current control to meet the high requirements of automotive electronics.
The high current handling capability and low on-resistance of FQB11P06-VB make it an ideal choice in a variety of low voltage, high current switching and power management applications.
The FQB11P06-VB MOSFET has a wide range of applications in multiple low voltage, high current applications:
- **Power Management**: In power management applications such as DC-DC converters and power switches, the FQB11P06-VB can effectively control the current flow and improve power efficiency and stability due to its low on-resistance and high current handling capability.
- **Load Switch**: This MOSFET is suitable for load switching applications such as load switching in switching power supplies. Its high current handling capability and low on-resistance enable it to provide reliable switching function under high load conditions.
- **Battery Management System**: The FQB11P06-VB is also suitable for battery management systems to control the charging and discharging process of the battery. Its high current handling capability and low on-resistance help improve the efficiency of the system and the battery life.
- **LED Driver**: In LED driver circuits, this MOSFET can be used as a switching element to control the switching of LEDs. Due to its high switching speed and low on-resistance, efficient LED driving and brightness control can be achieved.
- **Automotive Electronics**: In automotive electronic systems, such as motor control and power management systems, FQB11P06-VB can be used in high current switching applications, providing stable and reliable current control to meet the high requirements of automotive electronics.
The high current handling capability and low on-resistance of FQB11P06-VB make it an ideal choice in a variety of low voltage, high current switching and power management applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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