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FQB11N40C-VB Product details

Product introduction:

1. FQB11N40C-VB MOSFET Product Introduction

FQB11N40C-VB is a high voltage single N-channel MOSFET in TO263 package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) is 650V, making it suitable for power conversion and switching applications that require high voltage tolerance. The gate-source voltage (VGS) range of this MOSFET is ±30V, providing a wide control range. The threshold voltage (Vth) is 3.5V, ensuring stable conduction under appropriate gate voltage. The on-resistance (RDS(ON)) of FQB11N40C-VB is 430mΩ, and it can support a drain current of up to 18A at a VGS of 10V. Based on Plannar technology, the device has good voltage tolerance and stability, suitable for a variety of high voltage applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 650V 3.5V 18A 430mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 650V 3.5V 18A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 650V 3.5V 18A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
II. Detailed parameter description of FQB11N40C-VB MOSFET

1. **Package**: TO263
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 430mΩ @ VGS=10V
7. **Drain current (ID)**: 18A
8. **Technology**: Plannar technology
9. **Maximum junction temperature (Tj)**: Up to 150°C
10. **Input capacitance (Ciss)**: Medium, suitable for high voltage switching applications
11. **Switching speed**: Medium, suitable for medium frequency switching applications
12. **Drain-source diode reverse recovery time (trr)**: Moderate, supports high voltage operation

Domain and module applications:

3. FQB11N40C-VB MOSFET application areas and module examples

1. **High voltage power converter**:
- FQB11N40C-VB performs well in high voltage power converters, especially in applications that need to handle 650V high voltage. Its high voltage tolerance and stable performance enable it to effectively perform voltage conversion and voltage regulation, suitable for high voltage DC to DC converters (DC-DC) or AC to DC converters (AC-DC).

2. **Power switch**:
- In high voltage power switching applications, FQB11N40C-VB is able to stably control high voltage loads. Its 650V drain-source voltage and 18A drain current capability make it suitable for high power switching devices such as industrial power supplies and high power converters.

3. **Lighting control systems**:
- In lighting control systems, especially those LED drivers or fluorescent lamp controllers that require high voltage switching, the FQB11N40C-VB is able to provide stable switching performance. Its good voltage tolerance and moderate on-resistance ensure the stability and efficiency of the lighting system.

4. **Motor drivers**:
- In applications that require high voltage motor control, the FQB11N40C-VB MOSFET can be used as a switching element in a motor driver to handle high voltage loads and control the operation of the motor. Its high voltage tolerance and low on-resistance ensure efficient and stable motor control.

With its high voltage capability, stable performance and moderate on-resistance, the FQB11N40C-VB MOSFET is widely used in high voltage power management and switching control systems to provide reliable power conversion and load control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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