FQA9N90_F109-VB Product details
Product introduction:
FQA9N90_F109-VB is a high voltage single N-channel power MOSFET in TO3P package, designed for high voltage and high efficiency applications. The device has a high drain-source voltage (VDS) of 900V and supports a gate-source voltage (VGS) of ±30V, which enables it to have excellent stability under harsh voltage conditions. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 750mΩ @ VGS=10V, and the maximum drain current (ID) is 9A. FQA9N90_F109-VB is based on SJ_Multi-EPI (super junction multilayer epitaxy) technology, which not only improves the voltage handling capability of the device, but also significantly reduces the conduction loss.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Maximum drain current (ID)**: 9A
- **Technology type**: SJ_Multi-EPI (super junction multilayer epitaxy)
Domain and module applications:
The high voltage and high efficiency characteristics of FQA9N90_F109-VB MOSFET make it suitable for the following fields and modules:
1. **High-voltage switching power supply**: Due to its high voltage withstand capability of 900V, FQA9N90_F109-VB is very suitable for switching power supplies that need to handle high voltage. It can still provide stable power management when the input voltage is unstable, which is an ideal choice for industrial equipment and power equipment.
2. **Power converters and inverters**: The application of this MOSFET in high-voltage converters and inverters, especially solar photovoltaic inverters and wind power generation systems, can effectively convert energy, reduce energy loss, and improve the efficiency and reliability of the overall system.
3. **Industrial motor drive**: FQA9N90_F109-VB is suitable for high-voltage DC motor and AC motor drive modules, providing stable high voltage handling and switching performance, suitable for industrial automation and power transmission systems that require high power drive.
4. **High-voltage power distribution system**: In power regulation and distribution applications, this MOSFET is capable of handling high voltages, and through its low on-resistance, it reduces power losses and improves the overall efficiency of the power distribution system.
5. **Uninterruptible power supply (UPS)**: In UPS systems, FQA9N90_F109-VB provides high-reliability power conversion, ensuring stable backup power during power outages, and is suitable for critical application scenarios that require high voltage handling capabilities.
With its high withstand voltage and low conduction loss characteristics, FQA9N90_F109-VB provides efficient and reliable solutions for various high-voltage applications, and is an important component in the fields of industry, energy, and power management.
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