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FQA90N15_F109-VB Product details
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Product Introduction
The FQA90N15_F109-VB is a high-performance single N-channel MOSFET in a TO3P package, suitable for applications requiring high current and medium voltage handling. The device has a drain-source voltage (VDS) of 150V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. The FQA90N15_F109-VB with Trench technology has a low on-resistance (RDS(ON)) of 17mΩ@VGS=10V and is capable of carrying a drain current (ID) of up to 90A, enabling it to provide excellent performance and efficiency in high-power applications.
The FQA90N15_F109-VB is a high-performance single N-channel MOSFET in a TO3P package, suitable for applications requiring high current and medium voltage handling. The device has a drain-source voltage (VDS) of 150V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. The FQA90N15_F109-VB with Trench technology has a low on-resistance (RDS(ON)) of 17mΩ@VGS=10V and is capable of carrying a drain current (ID) of up to 90A, enabling it to provide excellent performance and efficiency in high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 150V | 3V | 90A | 17mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 150V | 3V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 150V | 3V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Package type**: TO3P
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON)）**: 17mΩ@VGS=10V
- **Drain current (ID)**: 90A
- **Technology**: Trench
- **Package type**: TO3P
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON)）**: 17mΩ@VGS=10V
- **Drain current (ID)**: 90A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
FQA90N15_F109-VB MOSFET is widely used in many key areas due to its high current capability and medium voltage adaptability. It performs particularly well in switching power supplies (SMPS), reducing energy losses and improving overall system efficiency by providing efficient power conversion. In the motor drive and battery management system of electric vehicles (EVs), the device is able to handle high current loads while ensuring stable and safe operation. In addition, FQA90N15_F109-VB is also suitable for industrial automation equipment and high-power DC-DC converters (DC-DC converters), in which its low on-resistance and high power handling capability can effectively reduce heat generation and enhance system reliability and efficiency.
FQA90N15_F109-VB MOSFET is widely used in many key areas due to its high current capability and medium voltage adaptability. It performs particularly well in switching power supplies (SMPS), reducing energy losses and improving overall system efficiency by providing efficient power conversion. In the motor drive and battery management system of electric vehicles (EVs), the device is able to handle high current loads while ensuring stable and safe operation. In addition, FQA90N15_F109-VB is also suitable for industrial automation equipment and high-power DC-DC converters (DC-DC converters), in which its low on-resistance and high power handling capability can effectively reduce heat generation and enhance system reliability and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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