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FQA6N90C_F109-VB Product details
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1. FQA6N90C_F109-VB Product Introduction
**FQA6N90C_F109-VB** is a high voltage single N-channel MOSFET in TO3P package, suitable for high voltage and high power applications. The device has a drain-source voltage (VDS) of up to 900V, a gate-source voltage (VGS) range of ±30V, and a threshold voltage (Vth) of 3.5V. At a gate-source voltage of 10V, its on-resistance (RDS(ON)) is 750mΩ, supporting a drain current (ID) of up to 9A. FQA6N90C_F109-VB adopts advanced Super-Junction multi-epitaxial (SJ_Multi-EPI) technology, which has lower conduction losses and higher efficiency, and is ideal for applications such as high-voltage switching power supplies and industrial control.
**FQA6N90C_F109-VB** is a high voltage single N-channel MOSFET in TO3P package, suitable for high voltage and high power applications. The device has a drain-source voltage (VDS) of up to 900V, a gate-source voltage (VGS) range of ±30V, and a threshold voltage (Vth) of 3.5V. At a gate-source voltage of 10V, its on-resistance (RDS(ON)) is 750mΩ, supporting a drain current (ID) of up to 9A. FQA6N90C_F109-VB adopts advanced Super-Junction multi-epitaxial (SJ_Multi-EPI) technology, which has lower conduction losses and higher efficiency, and is ideal for applications such as high-voltage switching power supplies and industrial control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
2. FQA6N90C_F109-VB Detailed parameter description
| **Parameter** | **Value** | **Unit** | **Description** |
|----------------------------|------------------------------|--------------|--------------------------------------|
| **Model** | FQA6N90C_F109-VB | | |
| **Package type** | TO3P | | Provides good heat dissipation and mechanical strength|
| **Channel configuration** | Single N-channel| | |
| **Drain-source voltage (VDS)** | 900 | V | Maximum withstand voltage|
| **Gate-source voltage (VGS)** | ±30 | V | Maximum gate-source voltage range|
| **Threshold voltage (Vth)** | 3.5 | V | Minimum voltage required for gate turn-on|
| **On-resistance (RDS(ON))** | 750 | mΩ @ VGS=10V | On-resistance, affects conduction loss|
| **Drain current (ID)** | 9 | A | Maximum continuous drain current|
| **Technology** | SJ_Multi-EPI | | Super-Junction multi-epitaxial technology, improves efficiency|
| **Operating junction temperature range (Tj)** | -55 ~ +150 | °C | Wide temperature range, adapt to harsh environments|
| **Power consumption (Pd)** | 150 | W | High power handling capability|
| **Input capacitance (Ciss)** | 2500 | pF | Low input capacitance, improves switching speed|
| **Reverse recovery time (trr)** | 250 | ns | Fast recovery time, reduces switching loss|
| **Parameter** | **Value** | **Unit** | **Description** |
|----------------------------|------------------------------|--------------|--------------------------------------|
| **Model** | FQA6N90C_F109-VB | | |
| **Package type** | TO3P | | Provides good heat dissipation and mechanical strength|
| **Channel configuration** | Single N-channel| | |
| **Drain-source voltage (VDS)** | 900 | V | Maximum withstand voltage|
| **Gate-source voltage (VGS)** | ±30 | V | Maximum gate-source voltage range|
| **Threshold voltage (Vth)** | 3.5 | V | Minimum voltage required for gate turn-on|
| **On-resistance (RDS(ON))** | 750 | mΩ @ VGS=10V | On-resistance, affects conduction loss|
| **Drain current (ID)** | 9 | A | Maximum continuous drain current|
| **Technology** | SJ_Multi-EPI | | Super-Junction multi-epitaxial technology, improves efficiency|
| **Operating junction temperature range (Tj)** | -55 ~ +150 | °C | Wide temperature range, adapt to harsh environments|
| **Power consumption (Pd)** | 150 | W | High power handling capability|
| **Input capacitance (Ciss)** | 2500 | pF | Low input capacitance, improves switching speed|
| **Reverse recovery time (trr)** | 250 | ns | Fast recovery time, reduces switching loss|
Domain and module applications：
3. Application fields and module examples
**FQA6N90C_F109-VB** has excellent performance in many fields due to its ultra-high drain-source voltage and reliable current handling capability, and is particularly suitable for high-voltage applications such as high-voltage switching power supplies, industrial control, and power conversion. The following are the main application fields and module examples of this product:
#### 1. **High-voltage switching power supply (SMPS)**
FQA6N90C_F109-VB performs well in high-voltage switching power supplies, especially for high-voltage application scenarios at the 900V level. Its high voltage tolerance and low conduction loss enable it to efficiently convert power, and it is widely used in industrial equipment power supplies, communication power supplies, and high-voltage power adapters.
#### 2. **Industrial control**
In industrial control systems, this MOSFET is suitable for high-voltage drive circuits and control modules. Its high withstand voltage of 900V and current capability of 9A enable it to be used in high-voltage motor control, industrial automation control, and high-voltage switch modules in power transmission, ensuring the stability and safety of the system.
#### 3. **Power Conversion System**
FQA6N90C_F109-VB can effectively improve conversion efficiency and reduce losses in power conversion systems such as DC-DC converters and AC-DC rectifiers. Its excellent performance in high-voltage power conversion scenarios makes it an important component in industrial power and energy management systems, especially in situations where high reliability is required.
#### 4. **Power Tools**
This MOSFET is also suitable for the drive circuit of high-voltage power tools, providing sufficient power and efficiency to drive high-load equipment. Its high voltage and current handling capabilities enable it to be used in the power control part of high-power power tools such as drills, cutters, and heavy machinery equipment, improving the working efficiency and durability of the tools.
#### 5. **Power grid and transmission equipment**
In power grid and transmission equipment, FQA6N90C_F109-VB can be used as a high-voltage switching element to control the efficient transmission of electricity. Its excellent voltage tolerance and low conduction loss ensure the stable operation of high-voltage lines and equipment in the power grid, and is particularly suitable for modules such as high-voltage circuit breakers and power transformers.
**Summary**, FQA6N90C_F109-VB is widely used in high-voltage power supply and industrial control fields due to its high voltage tolerance and excellent switching performance, providing reliable, stable and efficient solutions for various high-voltage applications.
**FQA6N90C_F109-VB** has excellent performance in many fields due to its ultra-high drain-source voltage and reliable current handling capability, and is particularly suitable for high-voltage applications such as high-voltage switching power supplies, industrial control, and power conversion. The following are the main application fields and module examples of this product:
#### 1. **High-voltage switching power supply (SMPS)**
FQA6N90C_F109-VB performs well in high-voltage switching power supplies, especially for high-voltage application scenarios at the 900V level. Its high voltage tolerance and low conduction loss enable it to efficiently convert power, and it is widely used in industrial equipment power supplies, communication power supplies, and high-voltage power adapters.
#### 2. **Industrial control**
In industrial control systems, this MOSFET is suitable for high-voltage drive circuits and control modules. Its high withstand voltage of 900V and current capability of 9A enable it to be used in high-voltage motor control, industrial automation control, and high-voltage switch modules in power transmission, ensuring the stability and safety of the system.
#### 3. **Power Conversion System**
FQA6N90C_F109-VB can effectively improve conversion efficiency and reduce losses in power conversion systems such as DC-DC converters and AC-DC rectifiers. Its excellent performance in high-voltage power conversion scenarios makes it an important component in industrial power and energy management systems, especially in situations where high reliability is required.
#### 4. **Power Tools**
This MOSFET is also suitable for the drive circuit of high-voltage power tools, providing sufficient power and efficiency to drive high-load equipment. Its high voltage and current handling capabilities enable it to be used in the power control part of high-power power tools such as drills, cutters, and heavy machinery equipment, improving the working efficiency and durability of the tools.
#### 5. **Power grid and transmission equipment**
In power grid and transmission equipment, FQA6N90C_F109-VB can be used as a high-voltage switching element to control the efficient transmission of electricity. Its excellent voltage tolerance and low conduction loss ensure the stable operation of high-voltage lines and equipment in the power grid, and is particularly suitable for modules such as high-voltage circuit breakers and power transformers.
**Summary**, FQA6N90C_F109-VB is widely used in high-voltage power supply and industrial control fields due to its high voltage tolerance and excellent switching performance, providing reliable, stable and efficient solutions for various high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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