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FQA6N80-VB Product details
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1. FQA6N80-VB Product Introduction
FQA6N80-VB is a high voltage N-channel MOSFET in TO3P package, designed for power electronics applications that require high voltage handling capabilities. The device supports a drain-source voltage (VDS) of up to 800V and a gate-source voltage (VGS) of ±30V, and can withstand extremely high voltage conditions. The turn-on voltage (Vth) of FQA6N80-VB is 3.5V, the on-resistance (RDS(ON)) is 500mΩ (@VGS=10V), and the maximum drain current (ID) is 11A. This MOSFET uses SJ_Multi-EPI technology, which provides excellent conductivity and stability in high voltage environments, and is very suitable for use in a variety of industrial and power applications that require high voltage management.
FQA6N80-VB is a high voltage N-channel MOSFET in TO3P package, designed for power electronics applications that require high voltage handling capabilities. The device supports a drain-source voltage (VDS) of up to 800V and a gate-source voltage (VGS) of ±30V, and can withstand extremely high voltage conditions. The turn-on voltage (Vth) of FQA6N80-VB is 3.5V, the on-resistance (RDS(ON)) is 500mΩ (@VGS=10V), and the maximum drain current (ID) is 11A. This MOSFET uses SJ_Multi-EPI technology, which provides excellent conductivity and stability in high voltage environments, and is very suitable for use in a variety of industrial and power applications that require high voltage management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
2. FQA6N80-VB Detailed parameter description
- **Package type**: TO3P
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Turning voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 11A
- **Technology type**: SJ_Multi-EPI technology
- **Power consumption**: Optimized design to cope with switching loss and conduction efficiency under high voltage
- **Package size**: TO3P package provides good heat dissipation and mechanical strength
- **Operating temperature range**: Suitable for harsh industrial and power environments
- **Package type**: TO3P
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Turning voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 11A
- **Technology type**: SJ_Multi-EPI technology
- **Power consumption**: Optimized design to cope with switching loss and conduction efficiency under high voltage
- **Package size**: TO3P package provides good heat dissipation and mechanical strength
- **Operating temperature range**: Suitable for harsh industrial and power environments
Domain and module applications：
3. Application fields and module examples of FQA6N80-VB
The high voltage withstand capability of FQA6N80-VB MOSFET makes it advantageous in a variety of applications that require reliable high-voltage switching, including:
1. **High-voltage power converter**: The 800V maximum drain-source voltage of FQA6N80-VB is very suitable for use in high-voltage power converters, such as high-voltage power supply units in industrial power equipment and medical equipment. Its high voltage handling capability and reliability ensure the stable operation of the system and can meet application scenarios with extremely high voltage tolerance requirements.
2. **Lighting control system**: In high-voltage lighting systems, especially high-pressure sodium lamps, metal halide lamps and other industrial lighting, FQA6N80-VB can be used as a switching element to control the flow of high-voltage current. Its high voltage withstand characteristics and low conduction losses ensure the efficient operation of the lighting system.
3. **Inverters and frequency converters**: The FQA6N80-VB performs well in inverter and frequency converter applications, and is suitable for solar power generation and wind power generation systems for converting DC to AC. The device can withstand high voltage inputs, provide stable power conversion and good thermal management performance.
4. **Industrial power protection circuits**: The high voltage and current capabilities of the FQA6N80-VB make it very suitable for use in power protection circuits of industrial equipment. It can be used for overvoltage protection and surge suppression to ensure the safety and stability of power equipment under abnormal voltage conditions.
These applications show that the FQA6N80-VB MOSFET has excellent high voltage handling capabilities and is widely used in power electronic systems that require reliability and voltage resistance.
The high voltage withstand capability of FQA6N80-VB MOSFET makes it advantageous in a variety of applications that require reliable high-voltage switching, including:
1. **High-voltage power converter**: The 800V maximum drain-source voltage of FQA6N80-VB is very suitable for use in high-voltage power converters, such as high-voltage power supply units in industrial power equipment and medical equipment. Its high voltage handling capability and reliability ensure the stable operation of the system and can meet application scenarios with extremely high voltage tolerance requirements.
2. **Lighting control system**: In high-voltage lighting systems, especially high-pressure sodium lamps, metal halide lamps and other industrial lighting, FQA6N80-VB can be used as a switching element to control the flow of high-voltage current. Its high voltage withstand characteristics and low conduction losses ensure the efficient operation of the lighting system.
3. **Inverters and frequency converters**: The FQA6N80-VB performs well in inverter and frequency converter applications, and is suitable for solar power generation and wind power generation systems for converting DC to AC. The device can withstand high voltage inputs, provide stable power conversion and good thermal management performance.
4. **Industrial power protection circuits**: The high voltage and current capabilities of the FQA6N80-VB make it very suitable for use in power protection circuits of industrial equipment. It can be used for overvoltage protection and surge suppression to ensure the safety and stability of power equipment under abnormal voltage conditions.
These applications show that the FQA6N80-VB MOSFET has excellent high voltage handling capabilities and is widely used in power electronic systems that require reliability and voltage resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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