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FQA48N20-VB Product details
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Product Introduction
FQA48N20-VB is a high-performance single N-channel MOSFET in TO3P package, designed to handle medium voltage and high current applications. This MOSFET has a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V, and adopts Trench technology. It provides an on-resistance (RDS(ON)) of 48mΩ and a maximum drain current (ID) of 60A. Its threshold voltage (Vth) is 3V, which gives FQA48N20-VB excellent switching performance and efficiency under high current and high voltage conditions.
FQA48N20-VB is a high-performance single N-channel MOSFET in TO3P package, designed to handle medium voltage and high current applications. This MOSFET has a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V, and adopts Trench technology. It provides an on-resistance (RDS(ON)) of 48mΩ and a maximum drain current (ID) of 60A. Its threshold voltage (Vth) is 3V, which gives FQA48N20-VB excellent switching performance and efficiency under high current and high voltage conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 200V | 3V | 60A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 200V | 3V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 200V | 3V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Package type**: TO3P
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ@VGS=10V
- **Drain current (ID)**: 60A
- **Technology**: Trench
- **Package type**: TO3P
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ@VGS=10V
- **Drain current (ID)**: 60A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
The high current and medium voltage characteristics of FQA48N20-VB MOSFET enable it to excel in multiple fields. For example, in switching power supplies (SMPS) and power converters (DC-DC converters), it is able to provide efficient power conversion, reduce energy loss and improve system efficiency. In electric vehicles (EVs), FQA48N20-VB can be used in motor control and battery management systems to handle high current loads and ensure system stability. In addition, this MOSFET is also suitable for industrial power management systems, high-power switching devices, and power electronic devices, providing stable switching operations and efficient current management in these applications. Its low on-resistance and high current handling capability enable it to effectively reduce heat generation and energy loss in high-power applications.
The high current and medium voltage characteristics of FQA48N20-VB MOSFET enable it to excel in multiple fields. For example, in switching power supplies (SMPS) and power converters (DC-DC converters), it is able to provide efficient power conversion, reduce energy loss and improve system efficiency. In electric vehicles (EVs), FQA48N20-VB can be used in motor control and battery management systems to handle high current loads and ensure system stability. In addition, this MOSFET is also suitable for industrial power management systems, high-power switching devices, and power electronic devices, providing stable switching operations and efficient current management in these applications. Its low on-resistance and high current handling capability enable it to effectively reduce heat generation and energy loss in high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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