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FQA44N30-VB Product details
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FQA44N30-VB MOSFET Product Introduction
FQA44N30-VB is a high-performance N-channel MOSFET in TO3P package, designed for high voltage and high current applications. This MOSFET can withstand drain-source voltage (VDS) up to 600V and supports gate-source voltage (VGS) of ±30V, suitable for use in environments requiring high voltage handling and high current operation. Its threshold voltage is 3.5V, on-resistance is 60mΩ (at a gate drive voltage of 10V), and maximum drain current is 47A. FQA44N30-VB uses SJ_Multi-EPI technology, which improves performance and reliability at high voltage, making it excel in high power applications.
FQA44N30-VB is a high-performance N-channel MOSFET in TO3P package, designed for high voltage and high current applications. This MOSFET can withstand drain-source voltage (VDS) up to 600V and supports gate-source voltage (VGS) of ±30V, suitable for use in environments requiring high voltage handling and high current operation. Its threshold voltage is 3.5V, on-resistance is 60mΩ (at a gate drive voltage of 10V), and maximum drain current is 47A. FQA44N30-VB uses SJ_Multi-EPI technology, which improves performance and reliability at high voltage, making it excel in high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | 60mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
FQA44N30-VB MOSFET Detailed parameter description
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS=10V
- **Drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS=10V
- **Drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
FQA44N30-VB MOSFET has a wide range of applications in multiple high voltage and high power applications:
- **High voltage switching power supply**: FQA44N30-VB is ideal for high voltage switching power supplies (SMPS), which need to handle high voltage input and provide stable output. The MOSFET's 600V withstand voltage and low on-resistance ensure efficient power conversion and improve the overall reliability of the system.
- **Industrial motor drive**: In industrial motor drive systems, such as inverters and servo drives, FQA44N30-VB can be used to control high voltage motors and provide stable current control. Its high current handling capability and excellent switching performance ensure efficient operation of the system under high load.
- **Inverter and Power Factor Correction (PFC) Circuits**: The FQA44N30-VB is suitable for a variety of high-voltage inverter and PFC circuits, which usually require high-voltage switching devices for efficient power conversion and current management. Its high voltage and low on-resistance characteristics enable it to perform well in these applications.
- **High-voltage DC Power Supply**: In high-voltage DC power supply systems, the FQA44N30-VB can serve as a key switching element to handle high voltage input and provide stable current output. This is especially important for applications that require high-voltage DC power supplies, such as power electronics and energy management systems.
The high voltage and high current handling capabilities of the FQA44N30-VB enable it to excel in high-voltage and high-power applications, providing a reliable and efficient solution for a variety of industrial and power electronics systems.
FQA44N30-VB MOSFET has a wide range of applications in multiple high voltage and high power applications:
- **High voltage switching power supply**: FQA44N30-VB is ideal for high voltage switching power supplies (SMPS), which need to handle high voltage input and provide stable output. The MOSFET's 600V withstand voltage and low on-resistance ensure efficient power conversion and improve the overall reliability of the system.
- **Industrial motor drive**: In industrial motor drive systems, such as inverters and servo drives, FQA44N30-VB can be used to control high voltage motors and provide stable current control. Its high current handling capability and excellent switching performance ensure efficient operation of the system under high load.
- **Inverter and Power Factor Correction (PFC) Circuits**: The FQA44N30-VB is suitable for a variety of high-voltage inverter and PFC circuits, which usually require high-voltage switching devices for efficient power conversion and current management. Its high voltage and low on-resistance characteristics enable it to perform well in these applications.
- **High-voltage DC Power Supply**: In high-voltage DC power supply systems, the FQA44N30-VB can serve as a key switching element to handle high voltage input and provide stable current output. This is especially important for applications that require high-voltage DC power supplies, such as power electronics and energy management systems.
The high voltage and high current handling capabilities of the FQA44N30-VB enable it to excel in high-voltage and high-power applications, providing a reliable and efficient solution for a variety of industrial and power electronics systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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