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FQA40N25-VB Product details
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1. FQA40N25-VB MOSFET Product Introduction
FQA40N25-VB is a high-performance single N-channel MOSFET in a TO3P package, designed for applications requiring high current and medium voltage. Its maximum drain-source voltage (VDS) is 250V, which is suitable for medium-voltage power conversion and drive applications. The gate-source voltage (VGS) range of this MOSFET is ±20V, allowing it to be used under a wide range of gate drive conditions. The threshold voltage (Vth) is 3.5V, ensuring stable conduction under appropriate gate voltage. The on-resistance (RDS(ON)) of FQA40N25-VB is 40mΩ, and it can provide a drain current of 60A at a VGS of 10V. Using Trench technology, this MOSFET has low conduction losses and good thermal stability in high-current applications, making it very suitable for high-efficiency power management systems.
FQA40N25-VB is a high-performance single N-channel MOSFET in a TO3P package, designed for applications requiring high current and medium voltage. Its maximum drain-source voltage (VDS) is 250V, which is suitable for medium-voltage power conversion and drive applications. The gate-source voltage (VGS) range of this MOSFET is ±20V, allowing it to be used under a wide range of gate drive conditions. The threshold voltage (Vth) is 3.5V, ensuring stable conduction under appropriate gate voltage. The on-resistance (RDS(ON)) of FQA40N25-VB is 40mΩ, and it can provide a drain current of 60A at a VGS of 10V. Using Trench technology, this MOSFET has low conduction losses and good thermal stability in high-current applications, making it very suitable for high-efficiency power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
II. Detailed parameter description of FQA40N25-VB MOSFET
1. **Package**: TO3P
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 250V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 40mΩ @ VGS=10V
7. **Drain current (ID)**: 60A
8. **Technology**: Trench technology
9. **Maximum junction temperature (Tj)**: Up to 150°C
10. **Input capacitance (Ciss)**: Low, suitable for high-efficiency switching applications
11. **Switching speed**: Fast, suitable for high-frequency applications
12. **Drain-source diode reverse recovery time (trr)**: short, suitable for high-frequency switching applications
1. **Package**: TO3P
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 250V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 40mΩ @ VGS=10V
7. **Drain current (ID)**: 60A
8. **Technology**: Trench technology
9. **Maximum junction temperature (Tj)**: Up to 150°C
10. **Input capacitance (Ciss)**: Low, suitable for high-efficiency switching applications
11. **Switching speed**: Fast, suitable for high-frequency applications
12. **Drain-source diode reverse recovery time (trr)**: short, suitable for high-frequency switching applications
Domain and module applications：
3. Application fields and module examples of FQA40N25-VB MOSFET
1. **Switching Power Supply (SMPS)**:
- FQA40N25-VB is suitable for switching power supply design, especially in applications that need to handle medium voltage and high current. Its 250V drain-source voltage and 40mΩ on-resistance enable it to efficiently perform power conversion and is suitable for high-efficiency power modules.
2. **Motor Drive**:
- In motor drive systems, FQA40N25-VB can effectively control high current loads. Its 60A drain current capability and low on-resistance enable it to provide smooth current control, which is suitable for high current drive requirements of motors.
3. **Power Factor Correction (PFC) Circuit**:
- FQA40N25-VB can provide efficient power conversion in power factor correction circuits and handle higher current loads. Its low on-resistance and high current capability ensure high efficiency and stability in PFC applications.
4. **Power Converter**:
- In power converter applications, FQA40N25-VB is able to handle medium voltage and high current power conversion requirements. Its high current capability and low switching losses enable it to operate stably in power converters, making it suitable for high-efficiency power conversion solutions.
With its high current handling capability and medium voltage tolerance, FQA40N25-VB MOSFET is widely used in high-efficiency power management systems to ensure stable operation under various load and switching conditions.
1. **Switching Power Supply (SMPS)**:
- FQA40N25-VB is suitable for switching power supply design, especially in applications that need to handle medium voltage and high current. Its 250V drain-source voltage and 40mΩ on-resistance enable it to efficiently perform power conversion and is suitable for high-efficiency power modules.
2. **Motor Drive**:
- In motor drive systems, FQA40N25-VB can effectively control high current loads. Its 60A drain current capability and low on-resistance enable it to provide smooth current control, which is suitable for high current drive requirements of motors.
3. **Power Factor Correction (PFC) Circuit**:
- FQA40N25-VB can provide efficient power conversion in power factor correction circuits and handle higher current loads. Its low on-resistance and high current capability ensure high efficiency and stability in PFC applications.
4. **Power Converter**:
- In power converter applications, FQA40N25-VB is able to handle medium voltage and high current power conversion requirements. Its high current capability and low switching losses enable it to operate stably in power converters, making it suitable for high-efficiency power conversion solutions.
With its high current handling capability and medium voltage tolerance, FQA40N25-VB MOSFET is widely used in high-efficiency power management systems to ensure stable operation under various load and switching conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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