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FQA38N30-VB Product details

Product introduction:

1. FQA38N30-VB Product Introduction

FQA38N30-VB is a high voltage single-channel N-type MOSFET in TO3P package. Designed for high power applications, this MOSFET can withstand a drain-source voltage (VDS) of up to 600V and can handle a maximum drain current (ID) of 47A. It uses SJ_Multi-EPI technology, which improves the breakdown voltage and heat dissipation performance of the device to ensure stable operation under high voltage and high power conditions. At a gate-source voltage (VGS) of 10V, the on-resistance (RDS(ON)) of FQA38N30-VB is 60mΩ. This MOSFET provides good electrical performance and reliability, and is suitable for switching and power control in high voltage applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO3P Single-N 600V 3.5V 47A 60mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO3P Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO3P Single-N 600V 3.5V 47A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO3P Single-N 600V 3.5V 47A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO3P Single-N
2. FQA38N30-VB Detailed parameter description

1. **Package type**: TO3P
2. **Polarity configuration**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 600V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 60mΩ @ VGS = 10V
7. **Drain current (ID)**: 47A
8. **Technology type**: SJ_Multi-EPI

Domain and module applications:

3. Application fields and module examples of FQA38N30-VB

The high voltage and high current handling capabilities of FQA38N30-VB MOSFET enable it to excel in multiple application fields:

1. **High-voltage switching power supply (SMPS)**: In high-voltage switching power supply systems, FQA38N30-VB can be used as an efficient switching element to handle high-voltage DC power and ensure stable power output and efficient energy conversion, which is suitable for high-power applications such as industrial power supplies and server power supplies.

2. **Motor drive system**: In high-voltage motor drive systems, this MOSFET can provide reliable high-voltage control and support efficient operation of motors. It is particularly suitable for industrial automation equipment and power tools to ensure stable operation of motors under high load conditions.

3. **Photovoltaic inverter**: In the inverter module of the photovoltaic power generation system, FQA38N30-VB can process the high-voltage DC input from the photovoltaic panel and convert it into AC, which is suitable for solar power generation systems and helps improve energy conversion efficiency.

4. **High-voltage power conversion equipment**: In high-voltage DC-DC converters and high-voltage AC-DC converters, FQA38N30-VB can stably handle high-voltage inputs and is suitable for conversion equipment for power transmission and power supply, providing efficient and reliable power conversion solutions.

The high voltage and high current characteristics of FQA38N30-VB MOSFET make it an ideal choice for handling high-power, high-voltage applications, and are widely used in power management, motor control, and energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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