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FQA32N20C-VB Product details
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1. FQA32N20C-VB Product Introduction
**FQA32N20C-VB** is a high-performance single N-channel MOSFET in TO3P package, designed for medium and high power applications. The device has a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) tolerance of ±20V, and its threshold voltage (Vth) is 4V. At a gate-source voltage of 10V, the on-resistance (RDS(ON)) is as low as 13.8mΩ, supporting a drain current (ID) of up to 96A. The FQA32N20C-VB uses advanced Trench technology, providing excellent switching performance and thermal stability, and is suitable for applications requiring high current handling and high switching speeds.
**FQA32N20C-VB** is a high-performance single N-channel MOSFET in TO3P package, designed for medium and high power applications. The device has a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) tolerance of ±20V, and its threshold voltage (Vth) is 4V. At a gate-source voltage of 10V, the on-resistance (RDS(ON)) is as low as 13.8mΩ, supporting a drain current (ID) of up to 96A. The FQA32N20C-VB uses advanced Trench technology, providing excellent switching performance and thermal stability, and is suitable for applications requiring high current handling and high switching speeds.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 200V | 4V | 96A | 13.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
II. Detailed parameter description of FQA32N20C-VB
| **Parameter** | **Value** | **Unit** | **Description** |
|----------------------------|------------------------------|--------------|--------------------------------------|
| **Model** | FQA32N20C-VB | | |
| **Package type** | TO3P | | Provides excellent heat dissipation and mechanical strength|
| **Channel configuration** | Single N-channel| | |
| **Drain-source voltage (VDS)** | 200 | V | Maximum withstand voltage|
| **Gate-source voltage (VGS)** | ±20 | V | Maximum gate-source voltage range|
| **Threshold voltage (Vth)** | 4 | V | Minimum voltage required for gate turn-on|
| **On-resistance (RDS(ON))** | 13.8 | mΩ @ VGS=10V | Low on-resistance, reduced conduction loss|
| **Drain current (ID)** | 96 | A | Maximum continuous drain current|
| **Technology** | Trench | | Trench technology, improved switching speed and efficiency|
| **Operating junction temperature range (Tj)** | -55 ~ +150 | °C | Wide temperature range, suitable for harsh environments|
| **Power dissipation (Pd)** | 225 | W | High power handling capability|
| **Input capacitance (Ciss)** | 3500 | pF | Low input capacitance, improved switching speed|
| **Reverse recovery time (trr)** | 150 | ns | Fast recovery time, reduced switching loss|
| **Parameter** | **Value** | **Unit** | **Description** |
|----------------------------|------------------------------|--------------|--------------------------------------|
| **Model** | FQA32N20C-VB | | |
| **Package type** | TO3P | | Provides excellent heat dissipation and mechanical strength|
| **Channel configuration** | Single N-channel| | |
| **Drain-source voltage (VDS)** | 200 | V | Maximum withstand voltage|
| **Gate-source voltage (VGS)** | ±20 | V | Maximum gate-source voltage range|
| **Threshold voltage (Vth)** | 4 | V | Minimum voltage required for gate turn-on|
| **On-resistance (RDS(ON))** | 13.8 | mΩ @ VGS=10V | Low on-resistance, reduced conduction loss|
| **Drain current (ID)** | 96 | A | Maximum continuous drain current|
| **Technology** | Trench | | Trench technology, improved switching speed and efficiency|
| **Operating junction temperature range (Tj)** | -55 ~ +150 | °C | Wide temperature range, suitable for harsh environments|
| **Power dissipation (Pd)** | 225 | W | High power handling capability|
| **Input capacitance (Ciss)** | 3500 | pF | Low input capacitance, improved switching speed|
| **Reverse recovery time (trr)** | 150 | ns | Fast recovery time, reduced switching loss|
Domain and module applications：
### 3. Application fields and module examples
**FQA32N20C-VB** has outstanding performance in many fields and modules due to its excellent switching performance and high current handling capability. The following are its main application fields and module examples:
#### 1. **Power conversion system**
In power conversion systems, such as DC-DC converters and AC-DC adapters, FQA32N20C-VB can efficiently convert electric energy as the main switching device. Its 200V drain-source voltage and 13.8mΩ on-resistance ensure low power consumption and efficient operation under high current conditions, and are widely used in consumer electronics, power adapters, and industrial power supplies.
#### 2. **Electric vehicle drive**
In electric vehicle drive systems, the high current handling capability and low on-resistance of FQA32N20C-VB make it an ideal choice for electric vehicle motor control modules. This MOSFET can stably control the start, run and stop of the motor, improve the efficiency and response speed of the system, and is suitable for the power system of electric vehicles and hybrid vehicles.
#### 3. **Motor control**
In various motor control applications, such as inverters and servo drives, FQA32N20C-VB can efficiently control the power and speed of the motor. Its excellent switching performance and high current capability make it suitable for industrial automation, manufacturing and robot control, ensuring the efficient and reliable operation of the motor drive system.
#### 4. **LED drive**
In high-power LED drive systems, FQA32N20C-VB can be used for switching control of LED lighting modules. Its low on-resistance and high current capability can improve the efficiency of LED drive, reduce energy loss, and provide stable light output. It is widely used in commercial lighting, architectural lighting and automotive lighting.
#### 5. **Switch Mode Power Supply (SMPS)**
In a switch mode power supply, FQA32N20C-VB can be used as an efficient switching element to handle high power power conversion. Its excellent switching performance and thermal stability help improve the efficiency and reliability of the power supply, and is suitable for computer power supply, communication power supply, and high power power adapter.
**Summary**, FQA32N20C-VB, with its high current handling capability and low on-resistance, is an ideal choice for various power conversion and control applications, ensuring efficient, stable and reliable operation of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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