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FQA27N25-VB Product details
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Product Introduction
FQA27N25-VB is a high-performance single N-channel MOSFET in TO3P package, designed to handle medium-to-high voltage and high current applications. It has a drain-source voltage (VDS) of 250V and a gate-source voltage (VGS) of ±20V, and uses Trench technology to provide a low on-resistance (RDS(ON)) of 40mΩ and a maximum drain current (ID) of 60A. The threshold voltage (Vth) of this MOSFET is 3.5V, which is suitable for use in applications requiring high efficiency and high power handling.
FQA27N25-VB is a high-performance single N-channel MOSFET in TO3P package, designed to handle medium-to-high voltage and high current applications. It has a drain-source voltage (VDS) of 250V and a gate-source voltage (VGS) of ±20V, and uses Trench technology to provide a low on-resistance (RDS(ON)) of 40mΩ and a maximum drain current (ID) of 60A. The threshold voltage (Vth) of this MOSFET is 3.5V, which is suitable for use in applications requiring high efficiency and high power handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Package type**: TO3P
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ@VGS=10V
- **Drain current (ID)**: 60A
- **Technology**: Trench
- **Package type**: TO3P
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ@VGS=10V
- **Drain current (ID)**: 60A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
The high current and low on-resistance characteristics of FQA27N25-VB MOSFET make it widely used in many fields. For example, in switching power supplies (SMPS), it can provide efficient switching operations, reduce energy losses, and improve power conversion efficiency. In electric vehicles (EVs), FQA27N25-VB can be used in motor drives and battery management systems to handle large currents and improve the overall efficiency of the system. In addition, it is also suitable for use in industrial power management systems, high-power DC-DC converters (DC-DC converters), and power electronic equipment to ensure stable operation in high-power environments. The low on-resistance and high current handling capabilities of this MOSFET enable it to perform well in situations requiring high power and high efficiency.
The high current and low on-resistance characteristics of FQA27N25-VB MOSFET make it widely used in many fields. For example, in switching power supplies (SMPS), it can provide efficient switching operations, reduce energy losses, and improve power conversion efficiency. In electric vehicles (EVs), FQA27N25-VB can be used in motor drives and battery management systems to handle large currents and improve the overall efficiency of the system. In addition, it is also suitable for use in industrial power management systems, high-power DC-DC converters (DC-DC converters), and power electronic equipment to ensure stable operation in high-power environments. The low on-resistance and high current handling capabilities of this MOSFET enable it to perform well in situations requiring high power and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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