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FQA19N60-VB Product details
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1. FQA19N60-VB MOSFET Product Introduction
FQA19N60-VB is a high voltage single N-channel MOSFET in TO3P package, suitable for power electronic applications requiring high voltage tolerance. Its drain-source voltage (VDS) can reach 600V, enabling stable operation in high voltage environments. The operating range of the gate-source voltage (VGS) is ±30V, providing good gate control flexibility. The threshold voltage (Vth) of this MOSFET is 3.5V, ensuring smooth conduction under appropriate gate drive. The on-resistance (RDS(ON)) of FQA19N60-VB is 280mΩ, and it can provide a drain current of 15A at a VGS of 10V. Using super junction multi-epitaxial (SJ_Multi-EPI) technology, FQA19N60-VB has low switching losses and good thermal stability, suitable for high voltage and medium current power management applications.
FQA19N60-VB is a high voltage single N-channel MOSFET in TO3P package, suitable for power electronic applications requiring high voltage tolerance. Its drain-source voltage (VDS) can reach 600V, enabling stable operation in high voltage environments. The operating range of the gate-source voltage (VGS) is ±30V, providing good gate control flexibility. The threshold voltage (Vth) of this MOSFET is 3.5V, ensuring smooth conduction under appropriate gate drive. The on-resistance (RDS(ON)) of FQA19N60-VB is 280mΩ, and it can provide a drain current of 15A at a VGS of 10V. Using super junction multi-epitaxial (SJ_Multi-EPI) technology, FQA19N60-VB has low switching losses and good thermal stability, suitable for high voltage and medium current power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | 280mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
II. Detailed parameter description of FQA19N60-VB MOSFET
1. **Package**: TO3P
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 600V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 280mΩ @ VGS=10V
7. **Drain current (ID)**: 15A
8. **Technology**: Superjunction multi-epitaxial (SJ_Multi-EPI)
9. **Maximum junction temperature (Tj)**: Up to 150°C
10. **Input capacitance (Ciss)**: Low, suitable for high-efficiency switching applications
11. **Switching speed**: Medium, suitable for general switching frequency
12. **Drain-source diode reverse recovery time (trr)**: Medium recovery time, suitable for standard frequency applications
1. **Package**: TO3P
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 600V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 280mΩ @ VGS=10V
7. **Drain current (ID)**: 15A
8. **Technology**: Superjunction multi-epitaxial (SJ_Multi-EPI)
9. **Maximum junction temperature (Tj)**: Up to 150°C
10. **Input capacitance (Ciss)**: Low, suitable for high-efficiency switching applications
11. **Switching speed**: Medium, suitable for general switching frequency
12. **Drain-source diode reverse recovery time (trr)**: Medium recovery time, suitable for standard frequency applications
Domain and module applications：
3. Application fields and module examples of FQA19N60-VB MOSFET
1. **High-voltage switch mode power supply (SMPS)**:
- FQA19N60-VB is very suitable for the design of high-voltage switch mode power supply. Its 600V drain-source voltage can handle high voltage input, while the 280mΩ on-resistance ensures relatively low power loss. It provides efficient current control and stable performance in high-voltage switch mode power supply.
2. **Power factor correction (PFC) circuit**:
- In the power factor correction circuit, FQA19N60-VB can effectively handle high voltage input and provide stable power factor correction function. Its medium on-resistance and good high voltage handling capability make it suitable for high voltage PFC applications, ensuring high efficiency and stability of the circuit.
3. **Industrial motor drive**:
- In industrial motor drive applications, FQA19N60-VB can handle high voltage motor control requirements. Although its on-resistance is high, it can provide stable current control within the current range of 15A, which is suitable for motor drive systems that require medium current and high voltage.
4. **Power Converter**:
- For power converters that require high voltage and high power processing, FQA19N60-VB provides good power conversion performance. Its 600V high voltage capability enables it to work stably in power converters, especially in high voltage conversion applications.
With its high voltage tolerance and medium current capability, FQA19N60-VB MOSFET is suitable for a variety of high voltage and medium power application scenarios, ensuring stable operation of equipment in high voltage environments.
1. **High-voltage switch mode power supply (SMPS)**:
- FQA19N60-VB is very suitable for the design of high-voltage switch mode power supply. Its 600V drain-source voltage can handle high voltage input, while the 280mΩ on-resistance ensures relatively low power loss. It provides efficient current control and stable performance in high-voltage switch mode power supply.
2. **Power factor correction (PFC) circuit**:
- In the power factor correction circuit, FQA19N60-VB can effectively handle high voltage input and provide stable power factor correction function. Its medium on-resistance and good high voltage handling capability make it suitable for high voltage PFC applications, ensuring high efficiency and stability of the circuit.
3. **Industrial motor drive**:
- In industrial motor drive applications, FQA19N60-VB can handle high voltage motor control requirements. Although its on-resistance is high, it can provide stable current control within the current range of 15A, which is suitable for motor drive systems that require medium current and high voltage.
4. **Power Converter**:
- For power converters that require high voltage and high power processing, FQA19N60-VB provides good power conversion performance. Its 600V high voltage capability enables it to work stably in power converters, especially in high voltage conversion applications.
With its high voltage tolerance and medium current capability, FQA19N60-VB MOSFET is suitable for a variety of high voltage and medium power application scenarios, ensuring stable operation of equipment in high voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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