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FQA13N50CF-VB Product details
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Product Introduction
FQA13N50CF-VB is a high voltage single N-channel MOSFET in TO3P package, designed for high voltage and medium current applications. Using SJ_Multi-EPI technology, the device has a drain-source voltage withstand capability of 600V and a drain current handling capability of 11A. The on-resistance of FQA13N50CF-VB is 380mΩ@VGS=10V and the turn-on voltage is 3.5V. Its characteristics make it stable and reliable in high voltage power management, power electronics and industrial control systems.
FQA13N50CF-VB is a high voltage single N-channel MOSFET in TO3P package, designed for high voltage and medium current applications. Using SJ_Multi-EPI technology, the device has a drain-source voltage withstand capability of 600V and a drain current handling capability of 11A. The on-resistance of FQA13N50CF-VB is 380mΩ@VGS=10V and the turn-on voltage is 3.5V. Its characteristics make it stable and reliable in high voltage power management, power electronics and industrial control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Parameter description
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage power converter**: FQA13N50CF-VB is suitable for high-voltage DC-DC converters and high-voltage AC-DC converters. In power conversion modules, its 600V drain-source voltage capability allows handling of high voltage inputs, and its 380mΩ on-resistance helps improve efficiency and reduce power consumption. Although the on-resistance is higher than other MOSFETs, it performs well in medium current applications.
2. **Power electronics applications**: In power electronic devices such as inverters and motor drives, FQA13N50CF-VB provides stable current control and high voltage handling capabilities. Its 11A drain current handling capability enables it to reliably drive medium-power loads and is suitable for a variety of industrial automation and motor control systems.
3. **Power inverter**: FQA13N50CF-VB can play an important role in solar inverters and other power inverter modules. Its 600V high voltage tolerance allows it to handle high voltage output from photovoltaic systems, while its stable current handling capability ensures efficient operation and reliability of the system.
In general, FQA13N50CF-VB is widely used in high voltage power conversion, power electronics applications and power inverters with its high voltage tolerance, moderate current handling capability and the stability of SJ_Multi-EPI technology, providing a stable and efficient solution for high voltage applications.
1. **High-voltage power converter**: FQA13N50CF-VB is suitable for high-voltage DC-DC converters and high-voltage AC-DC converters. In power conversion modules, its 600V drain-source voltage capability allows handling of high voltage inputs, and its 380mΩ on-resistance helps improve efficiency and reduce power consumption. Although the on-resistance is higher than other MOSFETs, it performs well in medium current applications.
2. **Power electronics applications**: In power electronic devices such as inverters and motor drives, FQA13N50CF-VB provides stable current control and high voltage handling capabilities. Its 11A drain current handling capability enables it to reliably drive medium-power loads and is suitable for a variety of industrial automation and motor control systems.
3. **Power inverter**: FQA13N50CF-VB can play an important role in solar inverters and other power inverter modules. Its 600V high voltage tolerance allows it to handle high voltage output from photovoltaic systems, while its stable current handling capability ensures efficient operation and reliability of the system.
In general, FQA13N50CF-VB is widely used in high voltage power conversion, power electronics applications and power inverters with its high voltage tolerance, moderate current handling capability and the stability of SJ_Multi-EPI technology, providing a stable and efficient solution for high voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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