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FQA10N80C_F109-VB Product details
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Product Introduction
FQA10N80C_F109-VB is a high-voltage single N-channel MOSFET in a TO3P package, designed for high-voltage, high-power applications. It has a drain-source voltage (VDS) of 900V and a gate-source voltage (VGS) of ±30V, capable of withstanding switching operations in high-voltage environments. This MOSFET uses SJ_Multi-EPI technology to achieve an on-resistance (RDS(ON)) of 750mΩ and a maximum drain current (ID) of 9A. Its threshold voltage (Vth) is 3.5V, ensuring reliability and efficiency in high-voltage operations.
FQA10N80C_F109-VB is a high-voltage single N-channel MOSFET in a TO3P package, designed for high-voltage, high-power applications. It has a drain-source voltage (VDS) of 900V and a gate-source voltage (VGS) of ±30V, capable of withstanding switching operations in high-voltage environments. This MOSFET uses SJ_Multi-EPI technology to achieve an on-resistance (RDS(ON)) of 750mΩ and a maximum drain current (ID) of 9A. Its threshold voltage (Vth) is 3.5V, ensuring reliability and efficiency in high-voltage operations.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Package type**: TO3P
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ@VGS=10V
- **Drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO3P
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ@VGS=10V
- **Drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
The high withstand voltage and medium current handling capability of FQA10N80C_F109-VB MOSFET make it widely used in many fields. For example, in high-voltage DC-DC converters (DC-DC converters), it can effectively handle high voltage input and ensure voltage regulation performance. In solar inverters, FQA10N80C_F109-VB can support efficient power conversion and optimize energy output. In addition, in industrial power management systems, this MOSFET can be used as a high-voltage switch to regulate and protect high-voltage circuits. It is also very suitable for use in electric vehicles (EVs) and other power electronic equipment that need to handle high voltages to ensure the safety and stability of the system.
The high withstand voltage and medium current handling capability of FQA10N80C_F109-VB MOSFET make it widely used in many fields. For example, in high-voltage DC-DC converters (DC-DC converters), it can effectively handle high voltage input and ensure voltage regulation performance. In solar inverters, FQA10N80C_F109-VB can support efficient power conversion and optimize energy output. In addition, in industrial power management systems, this MOSFET can be used as a high-voltage switch to regulate and protect high-voltage circuits. It is also very suitable for use in electric vehicles (EVs) and other power electronic equipment that need to handle high voltages to ensure the safety and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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